Performance Improvement of Pi-gate SOI MOSFET Transistor using High-k Dielectric with Metal Gate

Abstract

Pi-gate silicon-on insulator (SOI) MOSFET transistors have emerged as novel devices due to its simple architecture and better performance, better control over short-channel effects, and reduced power dissipation due to reduced gate leakage currents.As the oxide thickness scales below 2 nm, leakage currents due to tunnelling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO 2 gate oxide with a high-k material allows increased gate capacitance without the associated leakage effects.In this paper, we present the results of a 3D numerical simulation of the Pi-gate SOI MOSFET transistor. 3D device structure, based on the technology SOI is described and simulated by using SILVACO TCAD tools, and we compare the electrical characteristics results for titanium nitride (TiN) fabricated on Al 2 O 3 (k » 9), HfO 2 (k » 20), and La 2 O 3 (k » 30) gate dielectric.Excellent dielectric properties such as high-k constant, low leakage current, threshold voltage, and electrical characteristics were demonstrated. From the simulation result, it was shown that HfO 2 is the best dielectric material with metal gate TiN.

Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor

“…Among the high-k dielectrics which are currently most promising, as their dielectric permittivity are referred in Table 1. Among all the potential candidates for metal gate, TiN is widely studied because of its superior performance such as stability when contacted with high-k dielectrics, low resistivity, and process compatibility [6].…”