Symmetry, dimensionality, and interaction are crucial ingredients for phase transitions and quantum states of matter. As a prominent example, the integer quantum Hall effect (QHE) represents a topological phase generally regarded as characteristic for two-dimensional (2D) electronic systems, and its many aspects can be understood without invoking electron-electron interaction. The intriguing possibility of generalizing QHE to three-dimensional (3D) systems was proposed decades ago, yet it remains elusive experimentally. Here, we report for the first time clear experimental evidence for the 3D QHE, observed in bulk ZrTe5 crystals. Owing to the extremely high sample quality, the extreme quantum limit with only the lowest Landau level occupied can be achieved by an applied magnetic field as low as 1.5 T. Remarkably, in this regime, we observe a dissipationless longitudinal resistivity ≅ accompanied with a well-developed Hall resistivity plateau = ( ± . ) ( , ) , where , is the Fermi wavelength along the field direction ( axis). This striking result strongly suggests a Fermi surface instability driven by the enhanced interaction effects in the extreme quantum limit. In addition, with further increasing magnetic field, both and increase dramatically and display an interesting metal-insulator transition, representing another magnetic field driven quantum phase transition. Our findings not only unambiguously reveal a novel quantum state of matter resulting from an intricate interplay among dimensionality, interaction, and symmetry breaking, but also provide a promising platform for further exploration of more exotic quantum phases and transitions in 3D systems.Since its discovery in 1980, the QHE has been established and well understood in a variety of 2D electron systems, including the traditional 2D electron gas 1,2 , and 2D materials like graphene 3,4 , etc. The hallmark of QHE is that the Hall conductivity takes precisely quantized values as 2 /ℎ while the longitudinal conductivity vanishes 1,2 . Here, the prefactor is the filling factor which counts the number of filled Landau levels, is the elementary charge, and ℎ is Plank's constant. Soon after its

Photodetectors capable of detecting light in a wide spectrum is central to diversified optoelectronic applications in spectroscopy, remote sensing, imaging and optical communication. [1] Two-dimensional (2D) transition metal dichalcogenides (TMDs) provide a tremendous potential for broadband optoelectronics due to their relatively high mobility, appropriate bandgaps, and flexibility. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] In particular, TMD layers of different bandgaps and doping (p or n types) can be stacked together into van der 2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice-mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can surpass the fundamental limitations on their conventional semiconductor counterparts. Herein, a novel 2D h-BN/p-MoTe 2 / graphene/n-SnS 2 /h-BN p-g-n junction, fabricated by a layer-by-layer dry transfer, demonstrates high-sensitivity, broadband photodetection at room temperature. The combination of the MoTe 2 and SnS 2 of complementary bandgaps, and the graphene interlayer provides a unique vdW heterostructure with a vertical built-in electric field for high-efficiency broadband light absorption, exciton dissociation, and carrier transfer. The graphene interlayer plays a critical role in enhancing sensitivity and broadening the spectral range. An optimized device containing 5−7-layer graphene has been achieved and shows an extraordinary responsivity exceeding 2600 A W −1 with fast photoresponse and specific detectivity up to ≈10 13 Jones in the ultraviolet-visible-near-infrared spectrum. This result suggests that the vdW p-g-n junctions containing multiple photoactive TMDs can provide a viable approach toward future ultrahigh-sensitivity and broadband photonic detectors.

Single photon emission from localized excitons in two-dimensional (2D) materials has been extensively investigated because of its relevance for quantum information applications. Prerequisites are the availability of photons with high purity polarization and controllable polarization orientation that can be integrated with optical cavities. Here, deformation strain along edges of prepatterned square-shaped substrate protrusions is exploited to induce quasi-one-dimensional (1D) localized excitons in WSe 2 monolayers as an elegant way to get photons that fulfill these requirements. At zero magnetic field, the emission is linearly polarized with 95% purity because exciton states are valley hybridized with equal shares of both valleys and predominant emission from excitons with a dipole moment along the elongated direction. In a strong field, one valley is favored and the linear polarization is converted to high-purity circular polarization. This deterministic control over polarization purity and orientation is a valuable asset in the context of integrated quantum photonics.

In article number https://doi.org/10.1002/adma.201805656, Rui Chen, Liyuan Zhang, Youpin Gong, and co‐workers develop an h‐BN/MoTe2/graphene/SnS2/h‐BN van der Waals heterostructure to realize an ultrahigh‐sensitivity broadband (405–1550 nm) photodetector, due to its unique advantages for high‐efficiency light absorption and exciton dissociation. Graphene plays a key role in enhancing the sensitivity and broadening the spectral range, providing a viable approach toward future ultrahigh sensitivity and broadband photodetectors.

The single layer of Zirconium pentatelluride (ZrTe 5 ) has been predicted to be a large-gap two-dimensional (2D) topological insulator, which has attracted particular attention in the topological phase transitions and potential device application. Here we investigated the transport properties in ZrTe 5 films with the dependence of thickness from a few nm to several hundred nm. We find that the temperature of the resistivity anomaly's peak (T p ) is inclining to increase as the thickness decreases, and around a critical thickness of ~40 nm, the dominating carriers in the films change from n-type to p-type. With comprehensive studying of the Shubnikov-de Hass (SdH) oscillations and Hall resistance at variable temperatures, we demonstrate the multi-carrier transport instinct in the thin films. We extract the carrier densities and mobilities of two majority carriers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry's phase π, while the hole carriers may originate from the surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate ZrTe 5 film in the inert or vacuum environment to make a substantial improvement in the device quality.