The discovery of quantum Hall effect in two-dimensional (2D) electronic systems inspired the topological classifications of electronic systems 1,2 . By stacking 2D quantum Hall effects with interlayer coupling much weaker than the Landau level spacing, quasi-2D quantum Hall effects have been experimentally observed 3~7 , due to the similar physical origin of the 2D counterpart. Recently, in a real 3D electronic gas system where the interlayer coupling is much stronger than the Landau level spacing, 3D quantum Hall effect has been observed in ZrTe5 8 . In this Letter, we report the electronic transport features of its sister bulk material, i.e., HfTe5, under external magnetic field. We observe a series of plateaus in Hall resistance ρxy as magnetic field increases until it reaches the quantum limit at 1~2 Tesla. At the plateau regions, the longitudinal resistance ρxx exhibits local