Photodetectors: Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe<sub>2</sub>/Graphene/SnS<sub>2</sub> p–g–n Junctions (Adv. Mater. 6/2019)

Li, Alei; Chen, Qianxue; Wang, Peipei; Gan, Yuan; Qi, Tailei; Wang, Peng; Tang, Fangdong; Wu, Judy; Chen, Rui; Zhang, Liyuan; Gong, Yan‐Xiao

doi:10.1002/adma.201970040

Cited by 37 publications

(46 citation statements)

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“…The photoconductive gain of the In 2 S 3 /graphene/Si PD exceeds 1.4 × 10 5 , which is one order of magnitude larger than pristine graphene/Si device (Figure S13, Supporting Information). Moreover, the NEP can be calculated to a quite low value of 1.26 × 10 −16 W Hz −1/2 , which reveals that the built‐in electric field effectively inhibits the random transport of carriers . In comparison to other Gr/Si‐based Schottky PDs summarized in Table 1 , the photoresponsivity of our device clearly outperforms all the others.…”

Section: Resultsmentioning

confidence: 73%

“…The latter peak photoresponsivity is in line with the response tendency of silicon in the NIR region (see Figure S17, Supporting Information), indicating that the p‐Si plays a dominant role in the NIR region. The maintained high photoresponsivity in the range of 1000–1200 nm can be attributed to the synergistic effect between In 2 S 3 , graphene, and Si …”

Section: Resultsmentioning

confidence: 96%

“…To quantitatively evaluate the photodetection performance of the present In 2 S 3 /graphene/Si device, important parameters including photoresponsivity ( R λ ), photoconductive gain ( G ), noise equivalent power (NEP), detectivity ( D *), response speed, and stability were calculated through the following equations

R_{λ} = \frac{I_{ph}}{P S}

G = \frac{R_{λ} h c}{q λ}

NEP = {(2 q I_{normaldark})}^{1 / 2} / R_{λ}

D^{*} = R_{λ} S^{1 / 2} / {(2 q I_{normaldark})}^{1 / 2}

where q is the electron charge, S is the effectively illuminated area (the whole graphene area in this device), h is Planck constant, λ is the incident wavelength, and P is the incident power density.…”

Section: Resultsmentioning

confidence: 99%

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2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Zheng

Yao

et al. 2019

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Silicon‐based electronic devices, especially graphene/Si photodetectors (Gr/Si PDs), have triggered tremendous attention due to their simple structure and flexible integration of the Schottky junction. However, due to the relatively poor light–matter interaction and mobility of silicon, these Gr/Si PDs typically suffer an inevitable compromise between photoresponsivity and response speed. Herein, a novel strategy for coupling 2D In2S3 with Gr/Si PDs is demonstrated. The introduction of the double‐heterojunction design not only strengthens the light absorption of graphene/Si but also combines the advantages of the photogating effect and photovoltaic effect, which suppresses the dark current, accelerates the separation of photogenerated carriers, and brings photoconductive gain. As a result, In2S3/graphene/Si devices present an ultrahigh photoresponsivity of 4.53 × 104 A W−1 and fast response speed less than 40 µs, simultaneously. These parameters are an order of magnitude higher than pristine Gr/Si PDs and among the best values compared with reported 2D materials/Si heterojunction PDs. Furthermore, the In2S3/graphene/Si PD expresses outstanding long‐term stability, with negligible performance degradation even after 1 month in air or 1000 cycles of operation. These findings highlight a simple and novel strategy for constructing high‐sensitivity and ultrafast Gr/Si PDs for further optoelectronic applications.

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Section: Resultsmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 96%

R_{λ} = \frac{I_{ph}}{P S}

G = \frac{R_{λ} h c}{q λ}

NEP = {(2 q I_{normaldark})}^{1 / 2} / R_{λ}

D^{*} = R_{λ} S^{1 / 2} / {(2 q I_{normaldark})}^{1 / 2}

Section: Resultsmentioning

confidence: 99%

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2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Zheng

Yao

et al. 2019

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“…Atomically thin 2DHs were introduced into phototransistors for their suitable light adsorbing efficiency, narrowed junction width, and tunable bandgaps. Li et al created a novel dielectric shielded MoTe 2 /graphene/SnS 2 heterostructure for a sensitive IR photodetector, where a responsivity of 2600 A W −1 and detectivity of ~10 13 Jones with a broadband wavelength from the UV to near infrared (NIR) region were fulfilled.…”

Section: Device Structures and Physical Mechanism For Photodetectionmentioning

confidence: 99%

Two‐dimensional heterostructure promoted infrared photodetection devices

Rao

Wang

et al. 2019

InfoMat

112

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It is a rapidly developed subject in expanding the fundamental properties and application of two‐dimensional (2D) materials. The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures (2DHs) based broadband photodetectors in the far‐infrared (IR) and middle‐IR regions with high response and high detectivity. This review focuses on the strategy and motivation of designing 2DHs based high‐performance IR photodetectors, which provides a wide view of this field and new expectation for advanced photodetectors. First, the photocarriers' generation mechanism and frequently employed device structures are presented. Then, the 2DHs are divided into semimetal/semiconductor 2DHs, semiconductor/semiconductor 2DHs, and multidimensional semi‐2DHs; the advantages, motivation, mechanism, recent progress, and outlook are discussed. Finally, the challenges for next‐generation photodetectors are described for this rapidly developing field.

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“…Metal chalcogenides semiconductors are promising candidates for photoelectric devices owing to their specific electronic and optoelectronic properties. [ 19,20 ] Tin disulfide (SnS 2 ) is an indirect bandgap (2.2 eV) semiconductor, which has drawn considerable attentions owing to its advantages of low cost, earth abundance, nontoxicity, and environmental friendliness. [ 21 ] The absorption coefficient and carrier mobility is up to 10 5 –10 6 cm −1 and 230 cm 2 V −1 s −1 , respectively.…”

Section: Introductionmentioning

confidence: 99%

Self‐Powered and Broadband Photodetector Based on SnS₂/ZnO₁₋_xS_x Heterojunction

Jiang

Huang

et al. 2020

Adv Materials Inter

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is constructed by utilizing an integrated nanosystem consisting of an energy harvesting or storage unit and a light sensor. The simplified structure and maintenancefree features of the first category endow the low-cost advantage as compared with the second one. Furthermore, the heterojunction-based PDs generally possess superior performance compared with PEC and the integrated nanosystem. [10,11] In addition, the vertical heterojunction configuration is considered as one of the most essential cornerstones of high performance optoelectronic devices, which is attributed to its strong built-in electric field, the short carrier diffusion path, and the large active area. [12] Although considerable efforts have been devoted, [13-18] the reports on selfpowered broadband PDs remain limited and several challenges are to be solved. For instance, various photoactive materials and methods are applied to construct PDs, but it is still challenging to design a high performance self-powered PDs based on earth abundant materials by a facile method. In addition, several conditions need to be met for the photoactive materials: the large absorption coefficient, the superior carrier mobility, the tunable energy-level alignment with electrode for the sake of high-performance PDs. [5] Thus, it is still demanding to find suitable photoactive materials for PDs that can work at room temperature in the range from UV to NIR. Metal chalcogenides semiconductors are promising candidates for photoelectric devices owing to their specific electronic and optoelectronic properties. [19,20] Tin disulfide (SnS 2) is an indirect bandgap (2.2 eV) semiconductor, which has drawn considerable attentions owing to its advantages of low cost, earth abundance, nontoxicity, and environmental friendliness. [21] The absorption coefficient and carrier mobility is up to 10 5-10 6 cm −1 and 230 cm 2 V −1 s −1 , respectively. [5,22] SnS 2based PDs have shown superior performance, such as high on/off ratio, high responsivity, good stability, and fast response speed. [22-25] In addition, it has been proved that SnS 2 can be applied to construct a PD in the range from UV to NIR light, although it need to be powered externally. [26] Zinc oxide (ZnO), a typical n-type wide bandgap semiconductor, has already been widely applied in optoelectronic devices due to its wide bandgap and high exciton biding energy. [27-29] In addition, ZnO-based PDs are endowed the advantages of low applied field, fast response, and no oxygen dependency. [30,31] On the other hand, the doping of S atom can not only improve the optical and electrical properties of ZnO, but also modify the band structure of Self-powered photodetectors that can work without an external power source are expected to play a crucial role in future optoelectronic devices. Herein, SnS 2 /ZnO 1−x S x heterojunctions are fabricated by a facile sputtering method and constructed as self-powered broadband photodetectors covering from UV (365 nm) to NIR (850 nm). The self-powered device shows a superior responsivity of 8.28 mAW...

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Photodetectors: Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe₂/Graphene/SnS₂ p–g–n Junctions (Adv. Mater. 6/2019)

Cited by 37 publications

References 0 publications

2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Two‐dimensional heterostructure promoted infrared photodetection devices

Self‐Powered and Broadband Photodetector Based on SnS₂/ZnO₁₋_xS_x Heterojunction

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Photodetectors: Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p–g–n Junctions (Adv. Mater. 6/2019)

Cited by 37 publications

References 0 publications

2D In2S3 Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

2D In2S3 Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Two‐dimensional heterostructure promoted infrared photodetection devices

Self‐Powered and Broadband Photodetector Based on SnS2/ZnO1−xSx Heterojunction

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Product

Resources

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Photodetectors: Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe₂/Graphene/SnS₂ p–g–n Junctions (Adv. Mater. 6/2019)

2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

2D In₂S₃ Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Self‐Powered and Broadband Photodetector Based on SnS₂/ZnO₁₋_xS_x Heterojunction