This study investigated the effects of particle size and pH of SiO2-based slurry on chemical mechanical polishing for SiO2 film. It was found that the removal rates and surface roughness of the material was highly dependent on the particle size and pH. As the particle size varied, the main polishing mechanism provided the activation energy to mechanical erasure. In addition, pH affected the particle size and Zeta potential, which had an important effect on the strength of the mechanical and chemical action of the chemical mechanical polishing. The change in mechanical action greatly influenced the removal rate. According to the experimental results, the best polishing of SiO2 film was achieved with 40 nm particle size SiO2 abrasives when the pH was 4.
LiTaO3 has piezoelectric, ferroelectric, and pyroelectric optical properties with a broad transparent range from ultraviolet to infrared. In order to ensure good performance of the LiTaO3 substrate, the surface of the LiTaO3 substrate must be smooth. Chemical mechanical polishing has been used for planarization of integrated circuits or to obtain substrates of high surface quality. In this paper, neotame was studied as an additive for LiTaO3 slurry, which plays an important role in the polishing process. In addition, we show that different pH and different concentrations of neotame have a strong influence on the polishing rate, the surface roughness of the LiTaO3 substrate after polishing is different, and the surface roughness of the LiTaO3 substrate can be reduced to 0.112 nm. More importantly, neotame could improve the work-life of the polishing slurry and reduce the coefficient of friction, thereby reducing the fragmentation rate. Finally, the possible chemical reaction mechanism of neotame to accelerate polishing efficiency was given.
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