Effect of Particle Size and pH Value of Slurry on Chemical Mechanical Polishing of SiO₂ Film

Abstract

This study investigated the effects of particle size and pH of SiO2-based slurry on chemical mechanical polishing for SiO2 film. It was found that the removal rates and surface roughness of the material was highly dependent on the particle size and pH. As the particle size varied, the main polishing mechanism provided the activation energy to mechanical erasure. In addition, pH affected the particle size and Zeta potential, which had an important effect on the strength of the mechanical and chemical action of the chemical mechanical polishing. The change in mechanical action greatly influenced the removal rate. According to the experimental results, the best polishing of SiO2 film was achieved with 40 nm particle size SiO2 abrasives when the pH was 4.

Roles of Phthalic Acid and Oleic Acid on Chemical Mechanical Polishing in Alkaline Slurries for Cobalt Interconnects

“…During CMP process, polishing slurry is a vital factor that affects material removal rates (MRRs) and other polishing performance. [14][15][16][17] In recent years, numerous researchers have started to explore polishing slurries designed for Co interconnects. Typically, slurries for metal polishing are mostly composed of colloidal silica abrasive particles, hydrogen peroxide (H 2 O 2 , HP) oxidant, an amino acid or a carboxylic acid as a complexing agent, a triazole as a corrosion inhibitor, plus a long list of additives.…”