To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.

Controversy exists over whether aluminium has a role in the aetiology of Alzheimer's disease. Alzheimer's disease is neuropathologically characterized by the occurrence of a minimum density of neurofibrillary tangles and neuritic plaques in the hippocampus and the association cortex of the brain. The purported association of aluminium with Alzheimer's disease is based on: (1) the experimental induction of fibrillary changes in the neurons of animals by the injection of aluminium salts into brain tissue; (2) reported detection of aluminium in neuritic plaques and tangle-bearing neurons; (3) epidemiological studies linking aluminium levels in the environment, notably water supplies, with an increased prevalence of dementia; and (4) a reported decrease in the rate of disease progression following the administration of desferroxamine, an aluminium chelator, to clinically diagnosed sufferers of Alzheimer's disease. Here we use nuclear microscopy, a new analytical technique involving million-volt nuclear particles, to identify and analyse plaques in postmortem tissue from patients with Alzheimer's disease without using chemical staining techniques and fail to demonstrate the presence of aluminium in plaque cores in untreated tissue.

We report the utilization of a focused mega-electron-volt (MeV) proton beam to write accurate high-aspect-ratio structures at sub-100 nm dimensions. Typically, a MeV proton beam is focused to a sub-100 nm spot size and scanned over a suitable resist material. When the proton beam interacts with matter it follows an almost straight path. The secondary electrons induced by the primary proton beam have low energy and therefore limited range, resulting in minimal proximity effects. These features enable smooth three-dimensional structures to be direct written into resist materials. Initial tests have shown this technique capable of writing high aspect ratio walls of 30 nm width with sub-3 nm edge smoothness.

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In this paper, a novel method to realize embedded micro-channels is presented. The presented technology is based on a direct write technique using proton beams to pattern thick-film SU-8. This proton micro-machining method allows the production of high aspect ratio and complex three-dimensional micro-structures in polymers with aspect ratios of over 100 and 20 using poly(methylmethacrylate) (PMMA) and SU-8 respectively. As the SU-8 is used as a structural material, its mechanical properties have to be characterized. For a start, the Young's modulus of the proton beam exposed SU-8 is determined using a stylus-type load-deflection method. The second part of this paper describes the underlying theory and method used by the author to determine the Young's modulus of the proton beam exposed SU-8. Measurements of the SU-8 micro-structures show that the Young's modulus is dependent on the proton beam exposure dose. An exposure dose of 9.5 nC mm −2 results in an average Young's modulus value of 4.254 GPa.

We report a way of fabricating high-quality void-free high-aspect-ratio metallic stamps of 100nm width and 2μm depth, using the technique of proton beam writing coupled with electroplating using a nickel sulfamate solution. Proton beam writing is a one-step direct-write process with the ability to fabricate nanostructures with high-aspect-ratio vertical walls and smooth sides, and as such has ideal characteristics for three-dimensional (3D) stamp fabrication. Nanoindentation and atomic force microscopy measurements of the nickel surfaces of the fabricated stamp show a hardness and side-wall roughness of 5GPa and 7nm, respectively. The fabricated 100nm 3D stamps have been used to transfer test patterns into poly(methylmethacrylate) films, spin coated onto a silicon substrate. Proton beam writing coupled with electroplating offers a process of high potential for the fabrication of high quality metallic 3D nanostamps.