Fabrication of high aspect ratio 100nm metallic stamps for nanoimprint lithography using proton beam writing

Ansari, K.; Kan, J.A. van; Bettiol, Andrew A.; Watt, F.

doi:10.1063/1.1773933

Cited by 106 publications

(62 citation statements)

References 17 publications

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“…In the case of electronic energy deposition, resist materials behave similar to what is known from electron beam lithography. The energy dissipated into the resist following exposure leads to chemical damage of the polymer bonds, such as chain scission for positive resist and cross-linking in case of negative resist (Ansari et al, 2004). However, the ion resist interaction is much stronger for ions and will thus result in increased resist sensitivity.…”

Section: Resist-based Lithographymentioning

confidence: 99%

Focused Ion Beam Lithography

Wanzenboeck¹,

Waid²

2011

Recent Advances in Nanofabrication Techniques and Applications

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Section: Resist-based Lithographymentioning

confidence: 99%

Focused Ion Beam Lithography

Wanzenboeck¹,

Waid²

2011

Recent Advances in Nanofabrication Techniques and Applications

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“…A key industrial role for PBW is expected to be in the fabrication of stamp masters for nano-imprint lithography, which can then be used to replicate many devices, including masks for X-ray (LIGA) and extreme ultraviolet (EUV) lithography [27]. This combination of technologies will combine the high aspect ratio, small feature size and short development cycle of PBW with the volume production capabilities of conventional techniques.…”

Section: Applications Of Continuous Beamsmentioning

confidence: 99%

Materials Patterning and Characterisation at the Nanometre Scale Using Focused MeV Ion Beams: Present Achievements and Future Prospects

Grime

2009

Acta Phys. Pol. A

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A key phenomenon in the interaction of MeV ions and solids is that the energy transferred from the primary ions to the target electrons is high compared with atomic and molecular binding energies, but low compared with the ion energy. This means that there is a high probability of modifying the chemical properties of the material (for patterning) or of inducing the emission of electromagnetic radiation (for analysis), yet the path of particle is changed by a negligible amount, which means that focused beams remain sharp even after penetrating long depths into the material. Developments in focusing MeV ions in recent years have pushed the useable beam diameters into the sub-micrometre region, which means that nuclear microbeams are poised to make an impact in both direct write fabrication and micro-analysis at length scales of interest in nanotechnology or microbiology. This paper reviews the science and technology underlying the use of nuclear microbeams (ion solid interactions, focusing systems) and reports on the present status and trends of applications in sub-micron scale applications. Interactions between MeV ions and atoms: the key advantage of MeV ions in nanoscale applicationsMeV ions interact with the atoms of target materials through electrostatic forces between the charged electrons and nuclei of the atoms. Apart from a small fraction of ions which undergo large angle scattering resulting from a close approach to the nucleus (the Rutherford scattering), the primary effect of the interaction is to create a transient electric dipole excitation of the electron structure of the atom. Kinetic energy is absorbed from the ion and may result in ionisation or promoting one or more of the atomic electrons into excited states.The energy transferred from the ion to the atom depends on many factors, but can range from zero to a few tens of keV. This is large compared with electronic binding energies (especially those of valence electrons), giving a high probability of locally modifying the chemistry of the sample, but small compared with the primary ion energy, so that the ion is not strongly deflected or decelerated, and can undergo many thousands of atomic collisions while following an essentially straight path for a large part of its range. This is the unique advantage of MeV ions for high spatial resolution applications: there is a high probability of creating useful effects in the material, yet the primary ion has a long range and a straight path with low lateral scattering. This is demonstrated in Fig.

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“…The successful production of such structures via electroplating and selective etching will open up the possibility to integrate nanowires into functional devices. Here we present initial studies on process parameters of PMMA resist in combination with p-beam writing as a plating base (van Kan et al 2001;Ansari et al 2004) for nanowire production. The PMMA written templates have been used successfully in combination with Ni and Au electroplating to make high aspect ratio Ni and Au nanowires.…”

Section: Introductionmentioning

confidence: 99%

Proton beam writing: a platform technology for nanowire production

et al. 2008

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P-beam writing (proton beam writing) is a unique direct write 3D nano-lithographic technique which has been developed at the Centre for Ion Beam Applications (CIBA), in the Physics Department of the National University of Singapore. This technique employs a focused MeV proton beam which is scanned in a predetermined pattern over a resist (e.g. PMMA, SU-8 or HSQ), which is subsequently chemically developed. In e-beam writing as well as p-beam writing the energy loss of the primary beam is dominated by energy transfer to substrate electrons. Unlike the high energy secondary electrons generated during e-beam writing the secondary electrons induced by the primary proton beam have low energies (typically less than 100 eV) and therefore a limited range, resulting in minimal proximity effects. The low proximity effects exhibited by p-beam writing coupled with the straight trajectory and high penetration of the proton beam enables the production of high aspect ratio, high density 3D microand nano-structures with well defined smooth side walls to be directly written into resist materials. These structures can be used as templates to electroplate metallic nanowires.

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Fabrication of high aspect ratio 100nm metallic stamps for nanoimprint lithography using proton beam writing

Cited by 106 publications

References 17 publications

Focused Ion Beam Lithography

Focused Ion Beam Lithography

Materials Patterning and Characterisation at the Nanometre Scale Using Focused MeV Ion Beams: Present Achievements and Future Prospects

Proton beam writing: a platform technology for nanowire production

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