a b s t r a c tGeiger APD technology, which has been used for a few years now [[8] (2006) 78]. The present work has been conducted by a consortium of researchers from CESR and LAAS/CNRS and the manufacturing of components was achieved in the clean room of LAAS/CNRS.We present here an original N/P technology of photodiode, designed so as to offer a very good homogeneity in the electrical operating characteristics. For this, we have chosen a design and technological process that defines the breakdown voltage from the substrate doping.We present the technological process we developed, in which we took special care to maintain, by low transit temperature processes, at the highest quality level the initial characteristics of the materials.We will also present the performances of the diodes produced, with sizes ranging from 10 to 100 mm, as a function of many parameters (gain, dark current, etc). We also produced SiPM, and also 8 Â 8 arrays of SiPM.Typical characteristics for a single diode are a V br between 43 and 44 V, and a dark current below 1 pA at ambient temperature. But the most important feature seems to be the high homogeneity of these performances all over the wafer surface. This gives us great confidence in the next step of our work, which is the manufacturing of very high-sensitivity imaging devices.
2014 Un transistor à effet de champ JFET est fabriqué à partir d'un substrat de GaAs à l'aide de l'épitaxie en phase liquide. La structure comprend deux couches épitaxiées, une zone de GaAs de type n pour le canal et une région Ga0,6Al0,4As de type p forme la grille. Un des avantages du dispositif est que le processus de fabrication nécessite seulement quelques opérations. La conception et la technologie de fabrication du composant ainsi que les caractéristiques courant-tension sont décrites. Nous avons obtenu des valeurs de la transconductance égales ou supérieures à 12 mA/V. Le transistor a montré une tension de seuil de -4,6 V et une mobilité des électrons dans le canal atteignant 3 850 cm2/V.s. Les résultats obtenus à l'aide du dispositif précédent seront étendus à la fabrication du circuit intégré GaAlAs-GaAs associant une photodiode à un TEC.
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