Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors

Shibib, M.A.; Lindholm, F.A.; Therez, F.

doi:10.1109/t-ed.1979.19525

Cited by 99 publications

(18 citation statements)

References 17 publications

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“…1, respectively. Then, using (3) and (8) where ,ue is given in (2). Our values of AEga calculated using (20) are shown in Fig.…”

Section: Determination Of / ? and Cmentioning

confidence: 99%

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A simple accurate solution to minority electron injection in the p-type heavily doped emitter region of silicon devices

Cong

1995

Phys. Stat. Sol. (a)

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In the p‐type quasi‐neutral and heavily doped emitter region of silicon devices at room temperature, with the aid of our accurate empirical models for the apparent band‐gap narrowing and minority‐electron lifetime, a simple accurate theory of minority‐electron (emitter) saturation current density JEO, and effective minority‐electron transit time, which are expressed as functions of the surface acceptor density Ns, the electron surface recombination velocity S, and the emitter width W, is derived and discussed. It is found that, under transparent emitter region condition, our theoretical values of JEO(Ns) for S = ∞ and 0.19 μm ≦ W ≦ 0.25 μm are in good agreement with the corresponding ones measured by Cuevas et al., with a precision of the order of 22%.

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“…1, respectively. Then, using (3) and (8) where ,ue is given in (2). Our values of AEga calculated using (20) are shown in Fig.…”

Section: Determination Of / ? and Cmentioning

confidence: 99%

“…this condition is justified). where the minority-electron mobility pe is given in (2). Our values of z,(N) calculated using (21) are plotted in Fig.…”

Section: *mentioning

confidence: 99%

A simple accurate solution to minority electron injection in the p-type heavily doped emitter region of silicon devices

Cong

1995

Phys. Stat. Sol. (a)

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“…The difference observed between the theory and the experiment of the open circuit voltage values is due to the negligence of some physical mechanisms inherent to the heavy doping [6,7]. These mechanisms can be classified in two categories [8]: the band-gap narrowing and the change of the inter-bands rate transitions.…”

Section: Doping Levelmentioning

confidence: 99%

New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells

Benosman

Zerga

Dujardin

et al. 2001

Active and Passive Electronic Components

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In this study we have determined new coefficients for the physical model describing the band-gap narrowing and the minority carriers lifetime. This was accomplished according to the doping level of the thin emitter. This model allows us to take into account both the effects of the heavy doping and the majority carrier degeneration for the very high level of doping. The results we obtain by the corrected model are in good agreement with those reported in the literature and in different experiments. They show us the possibility of accurately evaluating the performances for then+psilicon solar cell. This model is then used to introduce a new concept for the thin layer emitter, called transparent emitter.

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“…L'expression des porteurs suivant les lois déduites de la statistique de Maxwell-Boltzmann ne peut plus être retenue pour l'optimisation des structures N -P comportant une densité d'impuretés donatrices supérieure à quelque 1017 cm-3. Le calcul des distributions en énergie des porteurs suivant la statistique de Fermi-Dirac donne une densité des électrons inférieure à la valeur déduite par la statistique de Maxwell-Boltzmann [20]. Parallèlement à la dégénérescence du semiconducteur fortement dopé, les phénomènes de réduction de la bande interdite apparaissent.…”

Section: Théorieunclassified

Cellules solaires au GaAlAs/GaAs à faible et fort niveaux de courant. Optimisation détaillée du rendement de conversion

Bourée

Therez

1980

Rev. Phys. Appl. (Paris)

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2014 L'étude proposée concerne l'optimisation du rendement des cellules au GaAlAs en fonction du niveau du courant, de la résistance série, de la température et en précise les limites dues aux différents paramètres physiques et technologiques. Une méthode détaillée de simulation numérique complète les résultats d'une étude classique des caractéristiques du fonctionnement des cellules solaires au GaAlAs/GaAs. L'analyse des principales propriétés photovoltaïques permet l'étude comparative des diverses structures. La théorie approfondie fait apparaître une modification des lois de conduction. Les valeurs des paramètres physiques qui rendent optimum le rendement de conversion à faible et fort niveaux de courant sont revues à partir de ces résultats. Les effets dus à l'élévation de la température, à la conduction non uniforme et aux distorsions des bandes d'énergie pour les dopages élevés sont développés.Abstract. 2014 The efficiency of GaAlAs solar cells is optimized with respect to the concentration ratio, series resistance and temperature. The proposed study describes the limitations yielded by the various physical and technological parameters. A detailed numerical analysis extends the results of a classical one for the GaAlAs/GaAs solar cell characteristics. The analysis of the main photovoltaïc properties leads to compare some structures with the others. The advanced theory shows a conduction law modification. Then, the physical parameter values which yield the maximum conversion efficiency at low and high current levels are reviewed. The effects of a temperature increase, a non-uniform conduction and the distortions of the energy bands at high doping densities are reported.Revue Phys. Appl. 15 (1980) 245-255 FÉVRIER 1980, PAGE

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Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors

Cited by 99 publications

References 17 publications

A simple accurate solution to minority electron injection in the p-type heavily doped emitter region of silicon devices

A simple accurate solution to minority electron injection in the p-type heavily doped emitter region of silicon devices

New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells

Cellules solaires au GaAlAs/GaAs à faible et fort niveaux de courant. Optimisation détaillée du rendement de conversion

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