It has recently been shown that the stress of many refractory thin films deposited by dc-magnetron sputtering can be influenced by the sputtering pressure. Usually the transition from compressive to tensile stress is too sharp for pressure to be a reliable variable for stress control. This is particularly true in applications such as x-ray optics and lithography where extremely low stress is required owing to minimal substrate rigidity. In this paper, we show that there exists a broad region of the parameter space of current, pressure, and rf-substrate bias where tungsten and molybdenum may be deposited with low stress. A detailed study of the effects of these parameters upon stress, plasma etch rate, and resistivity is reported.
Styrene and vinyldimethylethoxysilane plasma polymerization and plasma copolymerizationPreliminary studies of the use of plasma deposited styrene as a negative electron-beam resist for lithography in V grooves are reported. We show that reactor pressure and power strongly affect the exposure and mechanical properties of the resist. Contrast decreases, sensitivity increases, conformality improves, and swelling becomes more pronounced with increasing power or decreasing pressure. An optimized process has been developed for lithography in silicon V grooves. The contrast for that process is 2.3 and the sensitivity is 0.008 C/cm 2 •
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.