a b s t r a c tGermanium on sapphire (GeOS) is proposed for system on a chip applications. Sapphire substrates are demonstrated to exhibit lower rf losses and superior crosstalk suppression compared with oxidised silicon handle wafers. Inductors on sapphire also show higher quality factor and better frequency response than those manufactured on an SOI platform. GeOS substrates have been manufactured by wafer bonding. Bond strengths of greater than 2900 mJ m À2 have been obtained. Thin GeOS has been achieved by He/H 2 ion cut processes. A self-aligned W gate process on Ge has been established with processing temperature limited to 400 1C. P channel MOSTs exhibit low threshold voltage and a carrier mobility of about 400 cm 2 V À1 s
À1.
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon carbide layers on [MATH] and [MATH] silicon substrates. Silane/propane gas chemistry has been employed at growth temperatures less than 1000°C. The growth mechanism for SiC may be considered as carbonation of silane species adsorbed on the wafer surface. Sufficient propane is present in the gas ambient to allow complete carbonation, with the carbon concentration in the film saturating at 50%
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