Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics

Wadsworth, H.; Bhattacharya, Sanjib; McNeill, David; Ruddell, F.H.; Armstrong, B.M.; Gamble, H.S.; Denvir, Donal J.

doi:10.1016/j.mssp.2006.08.052

Cited by 8 publications

(5 citation statements)

References 2 publications

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“…The measured capacitance moves through a peak value and subsequently decreases (see for example the 10 kHz CV response), which is indicative of an interface defect response (34). For the case of a minority carrier inversion response, the capacitance acquires a constant value in inversion, where the magnitude of the inversion capacitance increases with decreasing ac signal frequency (41). This region of the C-V response is considered later in the paper.…”

Section: Ecs Transactions 25 (6) 113-127 (2009)mentioning

confidence: 99%

Structural and Electrical Properties of HfO2/n-In_xGa_1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

et al. 2009

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In this work results are presented of an investigation into the structural and electrical properties of HfO2 films on GaAs and InxGa1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitancevoltage responses of the GaAs and InxGa1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5x1013 cm-2. For the HfO2/In0.53Ga0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level {greater than or equal to}0.75 eV above the valence band in the HfO2/InxGa1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the InxGa1-xAs. The HfO2/In0.53Ga0.47As interface exhibits two defects at 0.3eV (1.7x1013cm-2eV) and 0.61eV (1.5x1013cm-2eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325oC.

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Section: Ecs Transactions 25 (6) 113-127 (2009)mentioning

confidence: 99%

Structural and Electrical Properties of HfO2/n-In_xGa_1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

et al. 2009

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“…Deposition rates obtained for Al 2 O 3 and HfO 2 were approximately 0.89 and 0.82 Ǻ/cycle. In some cases, the ALD was preceded by an in-situ plasma nitridation step for 5 minutes in nitrogen ambient to form a GeON interfacial layer (5). On selected samples, a densification at 400°C in nitrogen ambient was performed for 60 minutes.…”

Section: Methodsmentioning

confidence: 99%

“…An increase of hysteresis was also observed after each anneal. This implies that the interface was thermally unstable, which is attributed to formation of GeO and/or germanium up-diffusion leading to interface degradation (5). Using the Terman method, interface state density, D it , was found to be ~ 1x10 12 eV -1 cm -2 near the midgap.…”

Section: Al 2 O 3 Ald On Germaniummentioning

confidence: 99%

Electrical Characterization of ALD Al₂O₃ and HfO₂ Films on Germanium

Tantraviwat¹,

Low²,

Baine³

et al. 2010

ECS Trans.

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Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure.

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“…This may not be true for much larger permittivities, as seen for materials like HfO 2 , whose dielectric constant is ε = 16 − 22 [78][79][80][81][82], which could push C grd-pl up to C grd-pl ≈ 0.187 aF/nm, and then only about a factor of two smaller than C SWCNT i . Another instance where the order of dominance switches, is that of the liquid gating, which has been used to achieve strong field effect action on carbon nanotubes when the nanotube is immersed in solution.…”

Section: Intrinsic Quantum Capacitances Of Nanocables Andmentioning

confidence: 99%

Nanowire and Nanocable Intrinsic Quantum Capacitances and Junction Capacitances: Results for Metal and Semiconducting Oxides

Krowne

2010

Journal of Nanomaterials

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Here we calculate the intrinsic quantum capacitance of RuO2nanowires and RuO2/SiO2nanocables (filled interiors of nanotubes, which are empty), based upon available ab initio density of states values, and their conductances allowing determination of transmission coefficients. It is seen that intrinsic quantum capacitance values occur in the aF range. Next, expressions are derived for Schottky junction andp-njunction capacitances of nanowires and nanocables. Evaluation of these expressions for RuO2nanowires and RuO2/SiO2nanocables demonstrates that junction capacitance values also occur in the aF range. Comparisons are made between the intrinsic quantum and junction capacitances of RuO2nanowires and RuO2/SiO2nanocables, and between them and intrinsic quantum and junction capacitances of carbon nanotubes. We find that the intrinsic quantum capacitance of RuO2-based nanostructures dominates over its junction capacitances by an order of magnitude or more, having important implications for energy and charge storage.

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Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics

Cited by 8 publications

References 2 publications

Structural and Electrical Properties of HfO2/n-In_xGa_1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Structural and Electrical Properties of HfO2/n-In_xGa_1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Electrical Characterization of ALD Al₂O₃ and HfO₂ Films on Germanium

Nanowire and Nanocable Intrinsic Quantum Capacitances and Junction Capacitances: Results for Metal and Semiconducting Oxides

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Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics

Cited by 8 publications

References 2 publications

Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Electrical Characterization of ALD Al2O3 and HfO2 Films on Germanium

Nanowire and Nanocable Intrinsic Quantum Capacitances and Junction Capacitances: Results for Metal and Semiconducting Oxides

Contact Info

Product

Resources

About

Structural and Electrical Properties of HfO2/n-In_xGa_1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Structural and Electrical Properties of HfO2/n-In_xGa_1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Electrical Characterization of ALD Al₂O₃ and HfO₂ Films on Germanium