Structural and Electrical Properties of HfO2/n-In_xGa_1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Abstract

In this work results are presented of an investigation into the structural and electrical properties of HfO2 films on GaAs and InxGa1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitancevoltage responses of the GaAs and InxGa1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5x1013 cm-2. For the HfO2/In0.53Ga0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level {greater than or equal to}0.75 eV above the valence band in the HfO2/InxGa1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the InxGa1-xAs. The HfO2/In0.53Ga0.47As interface exhibits two defects at 0.3eV (1.7x1013cm-2eV) and 0.61eV (1.5x1013cm-2eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325oC.

(Invited) Equivalent Oxide Thickness Correction in the High-k/In0.53Ga0.47As/InP System

“…Experimental evidence has been presented for defects levels with energies aligned with the conduction band in the In 0.53 Ga 0.47 As (10), and the existence of such defect levels is consistent with the CV analysis over frequency and temperature for high-k/nIn x Ga 1-x As/n-InP structures (x:0, 0.15, 0.3 and 0.53) (19). With interface defects included in the system, the low frequency capacitance is given by,…”

Multiple Proton Diffusion and Film Densification in Atomic Layer Deposition Modeled by Density Functional Theory

“…In the ongoing miniaturization of electronic devices, nanometer-thin films of hafnium oxide are replacing silicon oxide as the gate insulator in field effect transistors. 1 The hafnium oxide thin films are fabricated using atomic layer deposition (ALD). 2 This study unveils the atomic scale reactions of ALD for hafnium oxide thin films.…”

“…Hafnium oxide (HfO 2 ) shows a band gap of approximately 6 eV and a high dielectric constant in thin film form of 25 which makes it an important high- k material. In the ongoing miniaturization of electronic devices, nanometer-thin films of hafnium oxide are replacing silicon oxide as the gate insulator in field effect transistors . The hafnium oxide thin films are fabricated using atomic layer deposition (ALD) .…”

Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

“…[1][2][3][4][5] However, one major outstanding issue with these systems is the quantification of fixed charge at the dielectric-semiconductor interface, fixed charge in the bulk of the oxide, and interface states. 6 There has also been much discussion of the validity of analysis of the interface state density of these high mobility semiconductor systems using techniques such as the conductance method, 7 the high-low technique, 8 the Berglund method, 9 and the Terman method. 10 We have already reported on the nature of the fixed charge components in the atomic layer deposited (ALD)-Al 2 O 3 =n In 0.53 Ga 0.47 As system.…”