SIMS analysis was applied to the characterization of InP, GaAs and InGaAs grown by chemical beam epitaxy (CBE). It includes the control of purity and doping, and the determination of growth rate and matrix composition. Some important characteristics of CBE growth, such as carbon incorporation, the temperature dependence of the growth rate and contamination by isoelectric elements, were studied carefully.
A thorough photoluminescence (PL) investigation of heavily Be-doped (up to a maximum of -3 x IO'' atoms/cm3) chemical beam epitaxy (CBE) grown InP layers showed the presence of t w o prominent emissions related to Be. one involving simple isolated Be acceptors (Be,;) and the other a deep-level (DL) band behaving like a pseudo donor (D)-acceptor (A) pair-like transition. From their identical values of activation energies for luminescence quenching (AE -40 f
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