Metallic barcode nanowires (BNWs) composed of repeating heterogeneous segments fabricated by template‐assisted electrodeposition can offer extended functionality in magnetic, electrical, mechanical, and biomedical applications. The authors consider such nanostructures as a 3D system of magnetically interacting elements with magnetic behavior strongly affected by complex magnetostatic interactions. This study discusses the influence of geometrical parameters of segments on the character of their interactions and the overall magnetic behavior of the array of BNWs having alternating magnetization, because the Fe and Au segments are made of Fe‐Au alloys with high and low magnetizations. By controlling the applied current densities and the elapsed time in the electrodeposition, the dimension of the Fe‐Au BNWs can be regulated. This study reveals that the influence of the length of magnetically weak Au segments on the interaction field between nanowires is different for samples with magnetically strong 100 and 200 nm long Fe segments using the first‐order reversal curve (FORC) diagram method. With the help of micromagnetic simulations, three types of magnetostatic interactions in the BNW arrays are discovered and analy. This study demonstrates that the dominating type of interaction depends on the geometric parameters of the Fe and Au segments and the interwire and intrawire distances.
Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation. Front‐end‐of‐line (FEOL) processes have provided various solutions to this predicament, whereas the back‐end‐of‐line (BEOL) processes have taken a step back. With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. This review explores the quest for new materials for successfully routing nanoscale interconnects. The challenges in the interconnect structures as physical dimensions shrink are first explored. Then, various problem‐solving options are considered based on the properties of materials. New materials are also introduced for barriers, such as 2D materials, self‐assembled molecular layers, high‐entropy alloys, and conductors, such as Co and Ru, intermetallic compounds, and MAX phases. The comprehensive discussion of each material includes state‐of‐the‐art studies ranging from the characteristics of materials by theoretical calculation to process applications to the current interconnect structures. This review intends to provide a materials‐based implementation strategy to bridge the gap between academia and industry.
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