Image diagnosis is an important technique in transient process research of high-energy physics. High dynamic range scenes require high linear dynamic range imaging systems. Scientific CMOS (sCMOS) image sensors have widely been used in high-energy physics, nuclear medical imaging, and astronomical observation because of their advantages in the high linear dynamic range. In this paper, we study the gain ratio variation and background value variation of commercial sCMOS image sensors. A self-adaptive fusion method is proposed to realize the fusion of high linear dynamic range images. The proposed method only uses the high gain image and the low gain image of the sCMOS image sensor to evaluate the gain ratio and the background compensation. The measured results show that the error rates of the evaluated gain ratio and background compensation are less than 2% and 6%. Test results show that the self-adaptive fusion method realizes well the fusion effects, which efficiently avoids the influence of gain ratio variation and background value variation.
The influence of pixel design on charge transfer, mainly on potential barrier and potential pocket, is investigated in this paper. By simplifying the interface region between the pinned photodiode (PPD) and the transfer gate (TG), an intuitive and simple method for analyzing the potential barrier and pocket is presented. Through TCAD simulations, the validity of the analysis method is verified, and the influence of some key dimension and process parameters in PPD pixel design on the potential barrier and pocket is clarified. The whole study help improve the understanding of the charge transfer limitation mechanism, and can achieve high charge transfer efficiency and low image lag noise in the PPD pixel design of CMOS image sensors (CISs).
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