The effect of photodiode shape on pinning potential for charge transfer in CMOS image sensors

Liu, Lu; Yang, Shaohua; Yan, Ming; Li, Binkang; Guo, Yang; Guo, Minghui; Li, Gang; Zhou, Errui

doi:10.1016/j.mejo.2022.105651

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Pixel Core Design1

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2023

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“…A more advanced 2D model that accounts for the impact of all four PN junctions in a pinned photodiode is available in Liu et al [ 14 ]. However, for quick analysis of the electric field, the simplified 1D model is sufficient.…”

Section: Pixel Core Designmentioning

confidence: 99%

Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor

Yue

Fossum

2023

Sensors

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This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the proposed pixels achieve a charge transfer time of less than 10 ns without requiring any process modifications. Moreover, the gate structure significantly reduces the floating diffusion capacitance, resulting in an increased conversion gain of 183 µV/e−. This advancement enables the image sensor to achieve the lowest reported noise of 5.1 e− rms. To demonstrate the effectiveness of both optimizations, a proof-of-concept CMOS image sensor is designed, taped-out and characterized.

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Section: Pixel Core Designmentioning

confidence: 99%