This work presents a new burst mode CMOS image sensor in 0.35 µm SiGe BiCMOS technology that can achieve a pixel rate of 1 TS/s. The sensor employs a novel integrated Streak architecture that includes a vector of 200 integrated photodiodes, each connected to a wideband transimpedance amplifier, and a 200 points deep analogue on-chip memory for burst imaging. Placing the pixel electronics next to the photodector results in a high fill factor of 84 %. The circuit has a closed loop delay generator that allows sampling speeds from 50 µs to 200 ps, resulting in the largest range recorded for a monolithic CMOS sensor to date. The sensor features a post-trigger functionality to avoid synchronization issues during event recording. For the recording of repetitive events, the sensor has a new accumulation mode to enhance the signal to noise ratio (SNR) by reducing the bandwidth of the sample & hold circuit, thus allowing the SNR to be increased by a factor of sqrt(10) per decade. The state-of-the-art time resolution makes this sensor ideal for observing subnanosecond events. It finds applications in various fields, including fluorescence metrology, time-resolved spectroscopy, optical tomography, laser Doppler velocimetry, and detonics.