Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors

Liu, Lu; Guo, Yang; Li, Binkang; Yang, Shaohua; Yan, Ming; Zhou, Errui; Guo, Minghui; Li, Gang

doi:10.1109/ted.2022.3200636

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…In Ref. [13], Uzma Khan in India reported the full well capacity and the pinned photodiode capacitance of four-transistor pixels in a CMOS image sensor to be dependent on the potential barrier offered by transfer gate. In Ref.…”

Section: Introductionmentioning

confidence: 99%

Incomplete charge transfer in CMOS image sensor caused by Si/SiO₂ interface states in the TG channel

Lu,

Liu,

Zhao

et al. 2023

J. Semicond.

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CMOS image sensors produced by the existing CMOS manufacturing process usually have difficulty achieving complete charge transfer owing to the introduction of potential barriers or Si/SiO2 interface state traps in the charge transfer path, which reduces the charge transfer efficiency and image quality. Until now, scholars have only considered mechanisms that limit charge transfer from the perspectives of potential barriers and spill back effect under high illumination condition. However, the existing models have thus far ignored the charge transfer limitation due to Si/SiO2 interface state traps in the transfer gate channel, particularly under low illumination. Therefore, this paper proposes, for the first time, an analytical model for quantifying the incomplete charge transfer caused by Si/SiO2 interface state traps in the transfer gate channel under low illumination. This model can predict the variation rules of the number of untransferred charges and charge transfer efficiency when the trap energy level follows Gaussian distribution, exponential distribution and measured distribution. The model was verified with technology computer-aided design simulations, and the results showed that the simulation results exhibit the consistency with the proposed model.

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Section: Introductionmentioning

confidence: 99%

Incomplete charge transfer in CMOS image sensor caused by Si/SiO₂ interface states in the TG channel

Lu,

Liu,

Zhao

et al. 2023

J. Semicond.

View full text Add to dashboard Cite

show abstract

The effect of photodiode shape on pinning potential for charge transfer in CMOS image sensors

Liu

Yang

Yan

et al. 2023

Microelectronics Journal

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Mathematical model of potential distribution in a pinned photodiode of an indirect time of flight CMOS image sensor

Shi¹,

Li²,

Mao³

et al. 2023

Appl. Opt.

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This paper focuses on the rapid charge transfer of lock-in pixels in time of flight 3D image sensors. Through the principal analysis, a mathematical model of potential distribution in a pinned photodiode (PPD) in different comb shapes is established. Based on this model, the influence of different comb shapes on the accelerating electric field in PPD is analyzed. The semiconductor device simulation tool SPECTRA is applied to verify the effectiveness of the model, and the simulation results are analyzed and discussed. When the width of comb tooth is in narrow and medium range, the potential changes more obviously with the increase of comb tooth angle α, whereas the potential becomes stable even if the comb tooth angle α increases sharply with the wide comb tooth width. The proposed mathematical model contributes to instructing the design of pixel transferring electrons rapidly and resolving image lag.

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Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors

Cited by 3 publications

References 23 publications

Incomplete charge transfer in CMOS image sensor caused by Si/SiO₂ interface states in the TG channel

Incomplete charge transfer in CMOS image sensor caused by Si/SiO₂ interface states in the TG channel

The effect of photodiode shape on pinning potential for charge transfer in CMOS image sensors

Mathematical model of potential distribution in a pinned photodiode of an indirect time of flight CMOS image sensor

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Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors

Cited by 3 publications

References 23 publications

Incomplete charge transfer in CMOS image sensor caused by Si/SiO2 interface states in the TG channel

Incomplete charge transfer in CMOS image sensor caused by Si/SiO2 interface states in the TG channel

The effect of photodiode shape on pinning potential for charge transfer in CMOS image sensors

Mathematical model of potential distribution in a pinned photodiode of an indirect time of flight CMOS image sensor

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Product

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Incomplete charge transfer in CMOS image sensor caused by Si/SiO₂ interface states in the TG channel

Incomplete charge transfer in CMOS image sensor caused by Si/SiO₂ interface states in the TG channel