An experimental study of current-induced magnetization reversal of the Ru/Co/Ru and Ru/Co/Ru/W structures was carried out. In the considered structures, due to the small value of the coercive force comparable in magnitude to the Oersted field and the SOT effect field, magnetization reversal is carried out by moving a domain wall parallel to the direction of current injection. For such a case, a new method for estimating the effective field of SOT based on the analysis of the domain wall position taking into account the distribution of the Oersted field was proposed. This method allowed determining the effective longitudinal field / = 1.6 • 10 −11 / −2 and the efficiency of SOT = 0.03 in the quasi-symmetric Ru/Co/Ru structure. It was found that adding the W capping layer enhances the SOT effect by 5 times.
I.
An
experimental study of the phenomenon of electric current influence
on the value and orientation of the exchange bias field (H
EB) in the Pt/Co/NiO structure is carried out. Depending
on the direction of the magnetization in a ferromagnet (FM) layer
and the current pulse amplitude, the value of the H
EB field can be changed repeatedly in the range of ±7.5
mT. A few experiments are performed to separate the contributions
from two current-induced effects: (i) an injection of the spin current
into an antiferromagnet layer (AFM) and (ii) Joule heating. As a result,
we conclude that the modification in the H
EB field during current pulse transmission in the Pt/Co/NiO structure
is due to heating and the low value of Néel temperature (T
N = 162 °C). This fact explains the absence
of the exchange bias effect on the spin–orbit torque (SOT)-assisted
magnetization switching. The most striking observation to emerge from
the experimental data analysis is that depending on the initial spin
configuration of the domain structure in the FM layer and the current
pulse amplitude, the exchange bias can be changed locally. This opens
up prospects for creating exchange-coupled FM/AFM structures with
dynamically tuned parameters of the exchange bias, which can be used
for the development of magnetic memory, neuromorphic, and logic devices
based on magnetic nanosystems.
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