We experimentally study surface plasmon lasing in a series of metal hole arrays on a gold-semiconductor interface. The sub-wavelength holes are arranged in square arrays of which we systematically vary the lattice constant and hole size. The semiconductor medium is optically pumped and operates at telecom wavelengths (λ ~ 1.5 μm). For all 9 studied arrays, we observe surface plasmon (SP) lasing close to normal incidence, where different lasers operate in different plasmonic bands and at different wavelengths. Angle- and frequency-resolved measurements of the spontaneous emission visualizes these bands over the relevant (ω, k||) range. The observed bands are accurately described by a simple coupled-wave model, which enables us to quantify the backwards and right-angle scattering of SPs at the holes in the metal film.
Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range : wavelength tuning, stacking, polarization control, and lasing Nötzel, R.; Anantathanasarn, S.; Veldhoven, van, P.J.; Otten, van Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Nötzel, R., Anantathanasarn, S., Veldhoven, van, P. J., Otten, van, F. W. M., Eijkemans, T. J., Trampert, A., ... Wolter, J. H. (2006). Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range : wavelength tuning, stacking, polarization control, and lasing. Journal of Applied Physics, 45(8B), 6544-6549. DOI: 10.1143/JJAP.45.6544 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Wavelength-tunable InAs quantum dots (QDs) embedded in lattice-matched InGaAsP on InP(100) substrates are grown by metalorganic vapor-phase epitaxy (MOVPE). As/P exchange, which causes a QD size and an emission wavelength that are very large, is suppressed by decreasing the QD growth temperature and V-III flow ratio. As/P exchange, QD size and emission wavelength are then reproducibly controlled by the thickness of ultrathin [0 -2 monolayers (ML)] GaAs interlayers underneath the QDs. Submonolayer GaAs coverages result in a shape transition from QDs to quantum dashes for a low V-III flow ratio. It is the combination of reduced growth temperature and V-III flow ratio with the insertion of GaAs interlayers of greater than 1 ML thickness which allows the tuning of the emission wavelength of QDs at room temperature in the 1.55 mm wavelength range. Temperature-dependent photoluminescence (PL) measurements reveal the excellent optical properties of the QDs. Widely stacked QD laye...
Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationCitation for published version (APA): Keyvaninia, S., Verstuyft, S., Pathak, S., Lelarge, F., Duan, G-H., Bordel, D., ... Thourhout, Van, D. (2013). III-Von-silicon multi-frequency lasers. Optics Express, 21(11), 13675-13683. DOI: 10.1364/OE.21.013675 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. 962-964 (1995). 9. C. Doerr, C. Joyner, M. Zirngibl, and L. W. Stulz, "Chirped waveguide grating router multifrequency laser with absolute wavelength control," IEEE Photon.
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