Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing

Abstract

Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range : wavelength tuning, stacking, polarization control, and lasing Nötzel, R.; Anantathanasarn, S.; Veldhoven, van, P.J.; Otten, van Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Nötzel, R., Anantathanasarn, S., Veldhoven, van, P. J., Otten, van, F. W. M., Eijkemans, T. J., Trampert, A., ... Wolter, J. H. (2006). Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range : wavelength tuning, stacking, polarization control, and lasing. Journal of Applied Physics, 45(8B), 6544-6549. DOI: 10.1143/JJAP.45.6544 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Wavelength-tunable InAs quantum dots (QDs) embedded in lattice-matched InGaAsP on InP(100) substrates are grown by metalorganic vapor-phase epitaxy (MOVPE). As/P exchange, which causes a QD size and an emission wavelength that are very large, is suppressed by decreasing the QD growth temperature and V-III flow ratio. As/P exchange, QD size and emission wavelength are then reproducibly controlled by the thickness of ultrathin [0 -2 monolayers (ML)] GaAs interlayers underneath the QDs. Submonolayer GaAs coverages result in a shape transition from QDs to quantum dashes for a low V-III flow ratio. It is the combination of reduced growth temperature and V-III flow ratio with the insertion of GaAs interlayers of greater than 1 ML thickness which allows the tuning of the emission wavelength of QDs at room temperature in the 1.55 mm wavelength range. Temperature-dependent photoluminescence (PL) measurements reveal the excellent optical properties of the QDs. Widely stacked QD laye...

Sensitivities of InGaAsP photonic crystal membrane nanocavities to hole refractive index

“…) was grown in this layer to generate emission at 1.55 µm wavelength [20]. A 400 nm SiN x mask was deposited by Plasma Enhanced Chemical Vapor Deposition on a 20 nm InP protective capping layer which was on top of the quaternary layer.…”

Dual-wavelength passive and hybrid mode-locking of 3, 45 and 10 GHz InAs/InP(100) quantum dot lasers

“…So far, a major part of the research on QDs has been dedicated to InGaAs/GaAs material systems which emit in the wavelength range of 1.0-1.3µm. Progress in growth of InAs self assembled QDs [1] and quantum dashes [2] on InP substrate has allowed research on features of such quantum structures in the 1.5µm telecommunication window. At the COBRA Research Institute, optically active materials based on InAs QDs on n-type (100) InP substrate have been developed which provide peak gain in the wavelength range of 1.5µm to 1.8µm [3].…”

Electromechanical wavelength tuning of double-membrane photonic crystal cavities

“…Samples 15 The bottom ͑top͒ 50 nm thick layer of the upper ͑lower͒ InGaAsP membrane is n-͑p-͒doped to 10 18 cm −3 . In this configuration the QDs, placed in an undoped region above the junction, should not be affected by the applied voltage.…”