Dual-wavelength passive and hybrid mode-locking of 3, 45 and 10 GHz InAs/InP(100) quantum dot lasers

Tahvili, M.S.; Du, Lixiong; Heck, Martijn J. R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

doi:10.1364/oe.20.008117

Cited by 13 publications

(7 citation statements)

References 34 publications

(47 reference statements)

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“…It was found that not only mode-locking of both the mode groups was observed but also their pulses were synchronized. A similar mode-locking characteristic was also observed by Tahvili et al [142] in a dual-wavelength mode-locked laser, which corresponds to lasing emission from the same electronic transition of a 2×4000 µm 2 twosection device. In addition, employing a long 13 mm device (650 µm long SA), a stable mode locking of 3 GHz was also demonstrated which is the lowest repetition rate reported for a monolithic InAs/InP Qdots laser.…”

Section: Two Sectionsupporting

confidence: 81%

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Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Two Sectionsupporting

confidence: 81%

“…Recently, hybrid mode-locking in two section InAs/InGaAsP/(100)-InP Qdots laser was investigated [142,143]. In this case an electrical modulation, with frequency close to the cavity freespectral range, is added to a reversely biased SA.…”

Section: Two Sectionmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…The principle of these measurements is similar to the one presented in [16]. In this method, the output signal from the PML was divided into two parts.…”

Section: Lettermentioning

confidence: 99%

“…Moreover, we examine the chirp of the output pulses by measurements of relative time delay between the spectral components of the comb [16].…”

mentioning

confidence: 99%

Study of extra wide coherent optical combs generated by a QW-based integrated passively mode-locked ring laser

et al. 2017

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“…First is the performance of the MLLDs. Interesting performance has been achieved using quantum well 12 and quantum dot gain materials 13,14 . The semiconductor modelocked lasers are much more compact and in principle robust, but their overall performance is disappointing.…”

Section: Introductionmentioning

confidence: 99%

Integrated InP based modelocked lasers and pulse shapers

Bente¹,

Tahvili²,

Moskalenko³

et al. 2013

SPIE Proceedings

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Integrated InP based modelocked lasers and pulse shapersBente, E.A.J.M.; Tahvili, M.S.; Moskalenko, V.; Latkowski, S.; Wale, M.J.; Javaloyes, J.; Landais, P.; Smit, M.K. Published in:Integrated Optics: Devices, Materials, and Technologies XVII, San Francisco, 2013 DOI: 10.1117 Published: 01/01/2013 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTIn this paper we present recent results obtained in the area of monolithically integrated modelocked semiconductor laser systems using generic InP based integration platform technology operating around 1550nm. Standardized components defined in this technology platform can be used to design and realize short pulse lasers and optical pulse shapers. This makes that these devices can be realized on wafers that can contain many other devices. In the area of short pulse lasers we report design studies based on measured optical amplifier performance data. This work has the ultimate goal to establish a library of widely applicable short pulse laser designs. Such lasers can include components for e.g. wavelength control. An important boundary condition on the laser design is that the laser can be located anywhere on the InP chip.In the area of pulse shaping we report on a 20 channel monolithic pulse shaper capable of phase and amplitude control in each channel. Special attention is given to the calibration of the phase modulator and amplifier settings. Pulse compression and manipulation of pulse generated from modelocked semiconductor lasers is demonstrated using a 40 GHz quantum ...

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Dual-wavelength passive and hybrid mode-locking of 3, 45 and 10 GHz InAs/InP(100) quantum dot lasers

Cited by 13 publications

References 34 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Study of extra wide coherent optical combs generated by a QW-based integrated passively mode-locked ring laser

Integrated InP based modelocked lasers and pulse shapers

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