Thin films of tin doped zinc oxide (ZnO: Sn) with thickness 300 ± 30 nm prepared by spray pyrolysis method at substrate temperatures of 400°C. The structure, surface morphological and optical properties were studied, for Two weight ratios of doping (2 and 4) wt %. The results of X-Ray measurements showed that all deposit samples have a polycrystalline pattern with hexagonal wurtzite type structure. The films crystallites were oriented along (002) plane. The morphology measurements obtained by scanning electron microscope (SEM) showed that there is a change in the surface texture by the increasing of tin weight ratios with the rate of porosity of the surface when treating with 4wt %. The measurement of Atomic force microscopy (AFM) revealed nano particles sized and the roughness of the surface decrease to increase deflection, while optical measurements showed a decrease The energy gap of the models that are expected in the undoped samples.
Thin films of transparent and conductive CdO and B1,3)w% doped cadmium oxide (CdO: B) (1 and 3) wt %, have been deposited using chemical spray pyrolysis (CSP)) technique on glass substrate temperature of 300°C. Microstructural analysis indicates that X-ray diffraction study shows that the obtained films were polycrystalline. The preferred orientation was along the direction (200) and that the average crystallite size increases with the increasing B content. Morphological properties were studied, by scanning electron microscope (SEM) and atomic force microscopy (AFM) which reveals that the grains have a similar column shape. UV-visible transmission spectroscopy reveal that the prepared thin films are transparent in the visible range, The value of the optical band gap obtained shows a slight increase in its values from 2.43 eV to 2.45 eV as B concentration increasing.
Various thin films of cadmium sulfide doped with different weight ratios (wt %) of indium (CdS: In), were prepared on glass substrates by Spray pyrolysis technique (SPT), The Microstructural, topography and optical characteristics were studied. Pure films and doped with In 1%. The results obtained revealed that the growth toward single crystalline hexagonal- cubic phases. The dominant reflection is in the direction (101) plane with a crystalline size 47.55 nm, which is calculated utilizing Scherrer equation. The increase in In to 3% tends the structure to be the poly crystalline with the existence of the prevalent reflection in the direction of (101) plane with a the crystal size of 53.89 nm. The topography measurements showed that the surfaces of the nanostructured are in the form of rods with a height of 1.99 nm and a diameter of 50-60 nm. The rod height decreased with the increasing in doping weight ratios, while the diameter of the rod increased. The optical measurements showed lower transmittance with the increasing of doping from T% 95 to T% 64. A decrease in the optical energy gap value was noticed.
The effect of the substrate temperature of the deposition of copper oxide prepared by chemical spray pyrolysis technique was studied. The XRD measurements show that all the films are polycrystalline structure with predominant phase(-111). The crystallite size increase with increasing substrate temperature. The AFM images in 1-D and the 2-D shows that the CuO nanostructure were in the shape of curly sticks growing in a vertical column at an average height of 2.00 nm and an average radius of 40 - 50 nm. These nanostructures of the 3% sample gets higher up to 9.00 nm. The value of the optical energy gap was calculated through the UV-Vis spectrometer and found to decrease with increasing the substrate temperature from 1.93 eV to 1.68 eV. Transmittance values also decreased from 79.5% to 36%.
The NiO and NiO-Cu doped films with various Cu contents of 5.68, 10.34, and 14.64 at%. Were deposited on a glass substrate with various thickness 50, 100, and 150 nm by RF-reactive magnetron sputtering technique. The effect of the thickness and the doping on the structural, electrical, and sensory properties of the films was mainly investigated. The X-ray diffraction studies revealed that all the deposited films were of single crystalline nature and exhibited cubic structure with preferential growth along 200 and only NiO peaks appear in the NiO-Cu films and when the thickness increased from 50 to 150 nm, the grain size increases from 24.38 to 25.036 nm. Compositional analysis indicated that Cu content increased in the film as the bonded chips increase in the target surface. The electrical resistivity of the NiO film showed a high electrical resistivity 280 K X detected by a four point probe measurement and when the Cu content in the films is 5.68 at%. The q value is reduced significantly to 45.9 K X as Cu content is increased to 10.34 at%, and it further decreases to 25.3 K X when the Cu content further increases to 14.64 at% the resistivity value decrease to 10.45 K X. The Hall measurement for all NiO and Cu-doped NiO films shows p-type conduction and reduction in the mobility of charge carrier from 9.67 9 10 2 to 8.46 9 10 cm 2 /V s, when the concentrations of the charge carriers increase from 4.30 9 10 10 to 4.23 9 10 13 cm -3 . The sensory measurements for NiO and Cu-doped NiO films, show that the 50 nm thickness has the highest sensitivity and response time for the NO 2 gas at the operating temperature 150°C.
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