An environmentally benign and scalable route for the production of gram scale quantities of nitrogen-doped graphene using a downstream microwave plasma source is reported. Simultaneous reduction and doping of graphene oxide is achieved and the process negates the need for high temperatures and toxic solvents associated with existing methods. This gas-phase low temperature process is completely dry and, thus, minimises re-aggregation of graphene flakes which is typically associated with liquid phase reduction methods. The resulting material has many potential uses, particularly in electrochemical energy.

Please cite this article in press as: R. Gatensby, et al., Controlled synthesis of transition metal dichalcogenide thin films for electronic applications, Appl. Surf. Sci. (2014) Two dimensional transition metal dichalcogenides (TMDs) are exciting materials for future applications in nanoelectronics, nanophotonics and sensing. In particular, sulfides and selenides of molybdenum (Mo) and tungsten (W) have attracted interest as they possess a band gap, which is important for integration into electronic device structures. However, the low throughput synthesis of high quality TMD thin films has thus far hindered the development of devices, and so a scalable method is required to fully exploit their exceptional properties. Within this work a facile route to the manufacture of devices from MoS 2 and WS 2 , grown by vapour phase sulfurisation of pre-deposited metal layers, is presented. Highly homogenous TMD films are produced over large areas. Fine control over TMD film thickness, down to a few layers, is achieved by modifying the thickness of the pre-deposited metal layer. The films are characterised by Raman spectroscopy, electron microscopy and X-ray photoelectron spectroscopy. The thinnest films exhibit photoluminescence, as predicted for monolayer MoS 2 films, due to confinement in two dimensions. By using shadow mask lithography, films with well-defined geometries were produced and subsequently integrated with standard microprocessing process flows and electrically characterised. In this way, MoS 2 based sensors were produced, displaying sensitivity to NH 3 down to 400 ppb. Our device manufacture is versatile, and is adaptable for future nanoscale (opto-) electronic devices as it is reproducible, cost effective and scalable up to wafer scale.

We report on an adjustable process for chemical vapour deposition of thin films of pyrolytic carbon on inert substrates using an acetylene feedstock. Through modification of the reaction parameters control over film thickness and roughness is attained. These conducting films can be deposited in a conformal fashion, with thicknesses as low as 5 nm and a surface roughness of less than 1 nm. The highly reliable, cost effective and scalable synthesis may have a range of applications in information and communications technology and other areas. Raman and X-ray photoelectron spectroscopies, as well as high resolution transmission electron microscopy are used to investigate the composition and crystallinity of these films. The suitability of these films as electrodes in transparent conductors is assessed through a combination of absorbance and sheet resistance measurements. The films have a resistivity of ~ 2 × 10-5 m but absorb strongly in the visible range. The electrochemical properties of the films are investigated and are seen to undergo a marked improvement following exposure to O 2 or N 2 plasmas, making them of interest as electrochemical electrodes.

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The use of a metallic adhesion layer is known to increase the thermomechanical stability of Au thin films against solid-state dewetting, but in turn results in damping of the plasmonic response, reducing their utility in applications such as heatassisted magnetic recording (HAMR). In this work, 50 nm Au films with Ti adhesion layers ranging in thickness from 0 to 5 nm were fabricated, and their thermal stability, electrical resistivity, and plasmonic response were measured. Subnanometer adhesion layers are demonstrated to significantly increase the stability of the thin films against dewetting at elevated temperatures (>200 °C), compared to more commonly used adhesion layer thicknesses that are in the range of 2−5 nm. For adhesion layers thicker than 1 nm, the diffusion of excess Ti through Au grain boundaries and subsequent oxidation was determined to result in degradation of the film. This mechanism was confirmed using transmission electron microscopy and X-ray photoelectron spectroscopy on annealed 0.5 and 5 nm adhesion layer samples. The superiority of subnanometer adhesion layers was further demonstrated through measurements of the surface-plasmon polariton resonance; those with thinner adhesion layers possessed both a stronger and spectrally sharper resonance. These results have relevance beyond HAMR to all Ti/Au systems operating at elevated temperatures.

The remarkable properties of graphene have potential for numerous applications; however, their exploitation depends on its reliable production. The chemical vapour deposition (CVD) growth of graphene on metal surfaces has become one of the most promising strategies for the production of high quality graphene in a scaleable manner. Here, we discuss graphene growth on nickel (Ni) and copper (Cu) directly from both gaseous hydrocarbons and solid carbon precursors. Further, we discuss in detail the transfer of graphene films to insulating substrates, by direct and polymer supported transfer methods.

The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained. These remarkable values, which are not far away from those of commercial products are obtained repeatedly on non-optimized substrates with fully scalable processes.