CVD growth and processing of graphene for electronic applications

Kumar, Sunil; McEvoy, Niall; Kim, Hye-Young; Lee, Kangho; Peltekis, N.; Rezvani, Ehsan; Nolan, Hugo; Weidlich, Anne; Daly, Ronan; Duesberg, Georg S.

doi:10.1002/pssb.201100179

Cited by 34 publications

(29 citation statements)

References 22 publications

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“…Recent research has shown that the unique physical, chemical and electronic properties of graphene may be exploited in a wide range of applications; namely sensing, 1,2 electronics 3,4 and energy. 5,6 In particular, energy conversion and storage technologies that take advantage of graphene's excellent mechanical strength, chemical stability and high surface area may be developed.…”

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confidence: 99%

“…In brief, GO powder was synthesised by a modified Hummers and Offeman method 32 to produce the starting material. Gram scale quantities of this material were placed in a chamber downstream from a radical plasma generator at 1000 W with a gas flow of 100 sccm of a 1 : 1 mixture of H 2 and NH 3 . No direct heating of the GO took place and the lack of applied bias in the vicinity of the sample minimised kinetic damage from accelerated ions.…”

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confidence: 99%

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Nitrogen-doped reduced graphene oxide electrodes for electrochemical supercapacitors

Nolan

Mendoza-Sánchez

Kumar

et al. 2014

Phys. Chem. Chem. Phys.

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Herein we use Nitrogen-doped reduced Graphene Oxide (N-rGO) as the active material in supercapacitor electrodes. Building on a previous work detailing the synthesis of this material, electrodes were fabricated via spray-deposition of aqueous dispersions and the electrochemical charge storage mechanism was investigated. Results indicate that the functionalised graphene displays improved performance compared to non-functionalised graphene. The simplicity of fabrication suggests ease of up-scaling of such electrodes for commercial applications.Recent research has shown that the unique physical, chemical and electronic properties of graphene may be exploited in a wide range of applications; namely sensing, 1,2 electronics 3,4 and energy. 5,6 In particular, energy conversion and storage technologies that take advantage of graphene's excellent mechanical strength, chemical stability and high surface area may be developed. Indeed, many research publications detail the use of graphene and related materials in lithium ion battery electrodes, 7 solar energy conversion, 8 supercapacitors 9 and as electrode materials in other electrochemical energy devices. 10 For many of these applications it has been shown that the presence of heteroatoms in the graphene lattice improves material performance. Chemical modification allows for tuning of graphene properties such as surface chemistry and electronic properties; 11 which renders them more suited to certain applications than pristine graphene. Nitrogen-doped (N-doped) graphene has been demonstrated to be of use as an electrocatalytic material for oxygen reduction in hydrogen fuel cells, 12 improves biocompatibility of carbon devices in biosensing 13 and enhances the performance of graphene-based supercapacitors. 14 Graphene may be synthesised via mechanical cleavage of graphite flakes, 15 Chemical Vapour Deposition (CVD) 16 or the decomposition of silicon carbide (SiC). 17 However, while the latter two have great potential in electronics fabrication, it is not feasible to produce gram-scale quantities using these methods. Liquid phase exfoliation and processing of graphene is one method which shows great potential as a means of producing large quantities of material. 18,19 Reduction of graphene oxide (GO) is one method which shows promise as a means of producing large quantities of material suited for energy applications. [20][21][22] Graphite oxide is easily exfoliated and the oxygen functional groups can be removed via thermal or chemical means. While the reduction of GO produces a graphene material with structural defects and residual heteroatoms, these issues may not be problematic for applications such as catalysis and energy storage, where crystallinity and structural integrity of the graphene material is not a priority. In fact, the presence of a few oxygen-containing groups at the surface can advantageously influence the interfacial activity between graphene electrodes and the electrolyte.Much work has been carried out towards production of N-doped graphene via several m...

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confidence: 99%

Nitrogen-doped reduced graphene oxide electrodes for electrochemical supercapacitors

Nolan

Mendoza-Sánchez

Kumar

et al. 2014

Phys. Chem. Chem. Phys.

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“…Graphene was produced using chemical vapor deposition (CVD) on copper (Cu) foils as described in detail in our previous work. 26 The graphene was then transferred onto the pre-patterned substrate, directly after removing the native oxide layer from the exposed silicon surface with HF, in order to form a direct contact between the graphene and the silicon. One end of the graphene lies on the n-Si surface without touching the metal electrode deposited on the n-Si, and the other end sits on the gold pad on the SiO 2 layer which insulates a direct contact between the metal electrode and the Si substrate.…”

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Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

2013

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“…In the uncovered catalyst areas graphene growth was observed [21]. The quality of the produced graphene features was analysed using optical microscopy, SEM and Raman spectroscopy.…”

Section: Resultsmentioning

confidence: 99%

Inkjet-defined field-effect transistors from chemical vapour deposited graphene

Hurch

Nolan

Hallam

et al. 2014

Carbon

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Available online xxxx A B S T R A C TIn this work, inkjet printing methods are used to create graphene field effect transistors with mobilities up to 3000 cm 2 V À1 s À1. A commercially-available chromium-based ink is used to define the device channel by inhibiting chemical vapour deposition of graphene in defined regions on a copper catalyst. We report on the patterned graphene growth using optical and electronic microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. Silver nanoparticle ink is used to create electrical contacts to the defined graphene regions. The resulting devices were characterised by electrical transport measurements at room temperature. As a result we are able to fabricate high-performance graphene field effect transistors entirely defined by a commercial inkjet printer with channel lengths of 50 lm.

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CVD growth and processing of graphene for electronic applications

Cited by 34 publications

References 22 publications

Nitrogen-doped reduced graphene oxide electrodes for electrochemical supercapacitors

Nitrogen-doped reduced graphene oxide electrodes for electrochemical supercapacitors

Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

Inkjet-defined field-effect transistors from chemical vapour deposited graphene

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