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Germanium implantation into Si was conducted to pre-amorphize the-si surface layer prior to a shallow/high dose (42 keV, 2 × 1015 cm−2) BF2 implant. Cross-sectional transmission electron microscopy showed that rapid thermal annealing (RTA) of the amorphous layer (without BF2 ) leaves defect-free material in the implanted region. Only a discrete layer of small (∼300Å) dislocation loops due to straggling ion damage was found to be present at a depth corresponding to the amorphous/crystalline interface. RTA of the amorphous layer with the BF2 creatpd a high density of uniformly. distributed fine defect clusters (∼50Å) in the surface region (0–500Å) in addition to the straggling ion damage. Boron and F profiles obtained by secondary ion mass spectrometry from the unannealed and rapid thermally annealed samples showed the presence of high concentrations of these impurities in the surface region where the fine defect clusters were observed. A comparison of the RTA behavior of the pre-amorphized surface layers (with or without BF2 ) produced by Ge and self-implantation is presented.

+ .The rapid thermal annealing behavior of BFr,mplanted silicon pre-aroorphized with Si+ and Ge+ has been investigated with conventional and hi gh-resolution cross-sectional transmiss ion electron micros copy, an d secondar y-i on mass s pectrometr y. Three di s tinct layers of defects (types I, II and III) are identified. Fine clusters (type III) in the near-surface regions of both Si+ and Ge+ pre-amorphized samples are shown to be related to flourine. In addition, models for the nucleation of interstitial dislocation loops (type I) and "hairpin" dislocations (type II) are presented. These models and the experimental results suggest that the densities of type I and type II defects can be reduced by pre-aroorphizing with Ge+ instead of Si+. Furtherroore, defect-free regrowth is demonstrated for samples which are pre-aroorphized with Ge+ and rapid-thermally annealed at USOOC.

Annealing behavior in oxygen ambients of the of the ferroelectric PZT on Hf and Zr electrodes has been studied in the temperature range of 500-800°C using the 3.045MeV O16(∝,∝)O16 resonance in backscattering spectrometry. Internal oxidation of the buried metal electrode was observed. Oxygen concentration of the PZT film decreases with increasing temperature. Pb loss of the PZT film occurred above 700°C.

A wide range of electrode materials have been investigated for use in ferroelectric-silicon CMOS technology. Numerous metal and metal-oxide films were deposited on silicon substrates and coated with sol-gel derived ferroelectric thin films. The films were sintered in either a diffusion furnace or by rapid thermal processing. Transmission electron microscopy was used to investigate the evolution of the resulting ferroelectric thin film microstructure and ferroelectric / electrode material interactions.Microstructural differences such as the volume fraction of the ferroelectric perovskite and pyrochlore phase, domains and grain structure are correlated with electrical results. A strong microstructural dependence on the substrate was found for the Cr, Zr, Hf and Ni electrode materials. In general, chromium and other metal-oxide films had high leakage currents and large volume fractions of the non-ferroelectric pyrochlore phase. Nickel electrodes displayed the best electrical results, but the microstructure is very different from the other ferroelectric films.

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