Characterization of ultra-shallow p/sup +/-n junction diodes fabricated by 500-eV boron-ion implantation

Hong, Shin-Nam; Ruggles, G. A.; Wortman, J. J.; Myers, Edward R.; Hren, J. J.

doi:10.1109/16.65732

Cited by 47 publications

(14 citation statements)

References 13 publications

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“…When the initial condition is C( [2] where C~ is the surface concentration (in atom/cm3), D is the boron diffusivity (in cm2/s), x is the distance from the surface (in cm), t is the doping time (in s). I2 The results for the calculation including an actual SIMS profile are shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct Doping

Kiyota

Nakamura

Inada

et al. 1993

J. Electrochem. Soc.

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Characteristics are shown for shallow boron-doped layers formed by a new doping method called rapid vapor-phase direct doping which is suitable for making shallow junctions of less than 50 nm. An atmospheric pressure CVD system is used for the experiments and, in this process, boron atoms are doped into Si from the vapor phase after the native oxide is removed in hydrogen. From the results obtained for time dependence of doping characteristics, the surface boron concentration increases almost proportionally to the doping time. This result means that the surface boron concentration is determined by the amount of supplied boron atoms. This unique characteristic is the reason why shallow junctions can be formed as confirmed by the simulation. The boron-doping efficiency increases drastically after the boron concentration on the Si surface exceeds solid solubility. This indicates that when the Si surface is covered with boron, the boron atoms which dissociated from B2Hs gas may adsorb on the surface easily. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-02-19 to IP

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Section: Discussionmentioning

confidence: 99%

Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct Doping

Kiyota

Nakamura

Inada

et al. 1993

J. Electrochem. Soc.

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“…13 When the incident 74 Ge collides with 11 B, ␥ is about 0.45. Therefore, the maximum energy can be transferred to B atom is less than half of the original Ge energy.…”

Section: B As-recoiled B Profilesmentioning

confidence: 99%

“…An additional advantage of amorphization is that low sheet resistance is achievable with anneal temperature as low as 550°C. 11 This is caused by solid phase epitaxy ͑SPE͒ that regrows the amorphous Si into crystalline Si, and results in a very high percentage of dopant activation in the regrown Si. Figure 4 shows the effects of anneal, Ge dose, and Ge energy on as-recoiled and annealed B profiles.…”

Section: Effects Of Anneal Ge Dose and Ge Energymentioning

confidence: 99%

Recoil implantation method for ultrashallow p+/n junction formation

Liu

Gearhart

Booske

et al. 2000

Journal of Applied Physics

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A recoil implantation technique is investigated for ultrashallow p ϩ /n junction formation. In this method, a 3-35 nm thick B layer is deposited on the wafer by magnetron sputtering. Then a medium energy ͑10-40 keV͒ Ge implant drives the boron atoms into Si by means of ion beam mixing. The remainder of the boron film is chemically etched away prior to the annealing step. Sub-60 nm deep p ϩ /n junctions with sheet resistance less than 1000 ⍀/sq and test diodes with leakage current density below 2 nA/cm 2 have been formed using this method.

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“…Many different types of diodes were studied such as Schottky barrier diodes, natural inversion layer diodes, and shallow pn junction diodes, which seem to be more promising than the rest of the devices [3]. Thermal diffusion and ion implantation of boron and phosphorus into silicon are important techniques for forming shallow junctions that are essential for UV detection and its applications [4][5][6][7]. These applications require low dark current and high-UV responsivity and stability.…”

Section: Introductionmentioning

confidence: 98%

High quantum efficiency of UV-enhanced silicon photodiodes

Saad¹

2002

Can. J. Phys.

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High quantum efficiency UV-enhanced (P + nn + ) silicon photodiodes have been developed using ion implantation, rapid thermal processing, and a thin silicon dioxide film as an antireflection/passivation layer. The unbiased devices have internal quantum efficiency in excess of 350% at a wavelength equal to 250 nm. The devices are stable, have very low dark current at a reverse bias voltage of 1 V and high responsivity. Analysis of the dopant concentration versus junction depth using a sheet resistance technique was done in this work. PACS Nos.: 85.60Gz, 85.60Bt, 85.60DWRésumé : Nous avons développé des photodiodes de silicium rehaussé (P + nn + ) de grande efficacité UV quantique par implantation ionique et traitement thermique rapide et en utilisant un mince film de dioxyde de silicium comme couche passive/anti-réflexion. À une longueur d'onde de 250 nm et sans polarisation, le dispositif a une efficacité quantique interne de 350 %. Avec une polarisation inverse de 1 V et à haute sensibilité, les dispositifs sont restés stables avec un faible courant d'obscurité. Nous avons étudié la concentration de dopants en fonction de la profondeur de jonction en utilisant une technique de résistance de couche.[Traduit par la Rédaction]

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Characterization of ultra-shallow p/sup +/-n junction diodes fabricated by 500-eV boron-ion implantation

Cited by 47 publications

References 13 publications

Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct Doping

Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct Doping

Recoil implantation method for ultrashallow p+/n junction formation

High quantum efficiency of UV-enhanced silicon photodiodes

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