Complex impedance measurements were used to analyze the influence of ultraviolet and ozone gas on the electronic behaviour of ZnO films grown by rf magnetron sputtering. The data show that UV exposure strongly increases the ac conductivity of the film at very low frequencies, and that after ozone exposure it recovers the original value. At high frequencies, however, UV-light exposure it does not change the conductivity but the ozone acts in the sense to decrease it. Two distinct mechanisms, related to two relaxation time distributions are clearly observed: they are superimposed in the virgin sample, but they split forming two semicircles in the z 00 (f) À z 0 (f) diagrams when the samples are treated with UV and/or ozone gas. A combination of the bruggeman effective medium approximation (BEMA) with the random free energy barrier model is used to fit the data and to explain the ac conductivity variation phenomena observed.
In this thesis we presented a detailed study of polymer light-emitting diodes (PLEDs) made with IZO as transparent electrode alternative to ITO. The electrical properties of thin film of IZO were studied by impedance measurements. Measurements with devices containing an additional transport layer of PEDOT were also performed. We used two different thin polymeric films for such studies: the MEH-PPV and a blend made by two polyfluorene derivatives. We also carried out a detailed investigation of several devices, making use of two techniques: by stationary J-V and by impedance measurements. The results were analyzed by the Arkhipov model (for stationary results), and by equivalent circuits and Dyre´s model for the spectroscopic results. We introduced an additional term of tunneling effect to the Arkhipov model, which improved the theoretical fitting over the experimental results at high fields. From the fittings we obtained important parameters of the produced devices.
This paper describes a theoretical model which takes into account charge injection by thermally stimulated hopping (HP), as proposed by Arkhipov, and Fowler–Nordheim tunneling (FNT), for steady‐state response of a metal/organic semiconductor hetero‐junction in a polymeric light‐emitting diode (PLED). The reason for combining these two models is that both injection processes are usually observed in metal/organic semiconductor hetero‐junctions. The present model takes into account the material disorder and the escape probability introduced by Arkhipov et al. for both injection processes. The proposed model was tested with experimental results obtained from a PLED ITO/MEH‐PPV/Al. Analysis of the experimental results took into account the well‐known characteristic of the MEH‐PPV in which the charge transport is dominated by holes. Because of this, the electronic current component is assumed to be negligible compared to that for holes. Considering that the device is composed of two different metal/semiconductor junctions, that is, ITO/MEH‐PPV and MEH‐PPV/Al, the heights of the different potential barriers could be determined. The injection potential barrier, for holes, was determined as 0.4 eV for direct bias (ITO as anode), and as 0.8 eV for reverse bias (aluminum as anode). It was verified that the FNT process is preferable to the HP process in the following situations: (i) high interface potential barrier, (ii) high electric field, and (iii) low temperatures. On the other hand, that is, for a low interface potential barrier, low electric field and high temperatures, the HP process is dominant. With the application of the proposed model, which combines HP and FNT, it was possible to fit the current versus voltage curves for the studied PLED in a wide range of temperatures and electric fields, for direct and reverse bias. Additionally, it was shown that the condition where the HP injection probability is neglected, the non‐linearity in FNT plots, lnJFNTtrue/F2 versus F−1, obtained experimentally by several authors, may be a consequence of the material disorder. When the HP process is associated with the FNT a more significant non‐linearity in the FNT plot was verified.
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