A new reference signal generation method for highdensity MRAM is reported. 0.4 0.8 m 2 magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-m CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state and low-resistance state regardless of applied voltage. When tested in 8 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.Index Terms-Magnetic tunnel junction (MTJ), magnetic random access memory (MRAM), reference cell, tunneling magnetoresistance (TMR).

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This paper is focus on the adoption of GST confined structure so as to achieve lower reset current. By modifying to GST confined structure, reset current is down to as small as 0.8mA. Eventually, our integrated 64Mb PRAM based on 0.18µm CMOS technology shows to offer large sensing and reasonable reliability.

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