This paper is focus on the adoption of GST confined structure so as to achieve lower reset current. By modifying to GST confined structure, reset current is down to as small as 0.8mA. Eventually, our integrated 64Mb PRAM based on 0.18µm CMOS technology shows to offer large sensing and reasonable reliability.
In this paper, we analyze the Initialization of Chalcogenide Material (ICM) mechanism and propose the next generation PRAM scheme. It is proposed that the ICM operation power can be lowered by decreasing the chalcogenide film thickness. To overcome the inherent limitation of high operation power, the self-heat confined structure is proposed and the ICM power can be significantly reduced. The chalcogenide scaling scheme, based on new proposed structure can resolve the operation power limitation in PRAM development.
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