Авторами исследовалась возможность создания эпитаксиальных структур GaAs-SnAs на подложках n+-GaAs и i-GaAs, обладающих важным достоинством, имеющим металлический тип проводимости и постоянную решетки, близкую друг к другу. Данные гетероструктуры могут использоваться в качестве базового элемента генераторов и приемников электромагнитного излучения СВЧ- и КВЧ-диапазонов волн.
The article discusses the issues of design and methodology related to the current-voltage (I-V) characteristics of a GaN HEMT. Reliable I-V characteristics show the operability of a semiconductor device, provide initial data for functional application of the device, and provide insight into the quality and reproducibility of the technological process. The type and behavior of I–V characteristics are influenced by the design and technological features of a GaN HEMT. Measurements of I-V characteristics in continuous and pulsed operation modes provide more details about the electrical and thermal characteristics of the devices under study.
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