Silicon-vacancy
(SiV–) color center in diamond
is of high interest for applications in nanophotonics and quantum
information technologies, as a single photon emitter with excellent
spectral properties. To obtain spectrally identical SiV– emitters, we doped homoepitaxial diamond films in situ with 28Si, 29Si, and 30Si isotopes
using isotopically enriched (>99.9%) silane SiH4 gas
added
in H2–CH4 mixtures in the course of the
microwave plasma-assisted chemical vapor deposition process. Zero-phonon
line components as narrow as ∼4.8 GHz were measured in both
absorption and luminescence spectra for the monoisotopic SiV– ensembles with a concentration of a few parts per billion. We determined
with high accuracy the Si isotopic energy shift of SiV– zero-phonon line. The SiV– emission intensity
is shown to be easily controlled by the doped epifilm thickness. Also,
we identified and characterized the localized single photon SiV– sources. The developed doping process opens a way
to produce the SiV– emitter ensembles with energy
confined in an extremely narrow range.
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