Growth of polycrystalline and single-crystal CVD diamonds with bright photoluminescence of Ge-V color centers using germane GeH4 as the dopant source

Седов, В. С.; Martyanov, Artem; Savin, Sergey; Bolshakov, A. P.; Bushuev, E.V.; Хомич, А. А.; Kudryavtsev, Oleg; Кривобок, В. С.; Nikolaev, S. N.; Ralchenko, V.G.

doi:10.1016/j.diamond.2018.10.001

Cited by 46 publications

(35 citation statements)

References 51 publications

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“…42 Similarly, the incorporation of GeV – centres in diamond has been demonstrated by utilizing suitable precursors or substrates both during HPHT and CVD synthesis, while SnV – has only been synthesized via HPHT synthesis, so far. 43–48 The effectiveness of the synthesis depends on the solubility of the specific element, and thus decreases as the atomic radius increases. It should be noted that the synthesized emitters generally exhibit better optical properties, for example, higher photostability and narrower emission bandwidth, than those of centres fabricated by ion implantation—mainly owing to the higher crystalline quality of the former.…”

Section: Fabrication Strategiesmentioning

confidence: 99%

Quantum nanophotonics with group IV defects in diamond

et al. 2019

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Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged—group IV colour centres—namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

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Section: Fabrication Strategiesmentioning

confidence: 99%

Quantum nanophotonics with group IV defects in diamond

et al. 2019

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“…Particularly, the doping with nitrogen [ 36 ] can be performed not only in conventional way by N 2 adding in CH 4 –H 2 gas mixture, but also using N 2 O doping gas. [ 37 ] Gas precursors such as SiH 4 [ 38 ] and GeH 4 , [ 39 ] and crystalline Si, [ 40,41 ] SiC, [ 42 ] SiO 2 , [ 43 ] or Ge [ 44 ] can be used for diamond doping and SiV or GeV color center formation, respectively.…”

Section: Diamond Doping For Color Center Formationmentioning

confidence: 99%

Tailoring of Typical Color Centers in Diamond for Photonics

et al. 2020

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On the demand of single‐photon entangled light sources and high‐sensitivity probes in the fields of quantum information processing, weak magnetic field detection and biosensing, the nitrogen vacancy (NV) color center is very attractive and has been deeply and intensively studied, due to its convenience of spin initialization, operation, and optical readout combined with long coherence time in the ambient environment. Although the application prospect is promising, there are still some problems to be solved before fully exerting its characteristic performance, including enhancement of emission of NV centers in certain charge state (NV− or NV0), obtaining indistinguishable photons, and improving of collecting efficiency for the photons. Herein, the research progress in these issues is reviewed and commented on to help researchers grasp the current trends. In addition, the development of emerging color centers, such as germanium vacancy defects, and rare‐earth dopants, with great potential for various applications, are also briefly surveyed.

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“…В спектре ФЛ центра GeV при комнатной температуре БФЛ, в которой сосредоточено 60% интенсивности излучения [15], имеет максимум на длине волны ∼ 602 nm и характерное время жизни ∼ 1.4 ns [16]. При комнатной температуре FWHM БФЛ центра GeV в спектре ФЛ гомоэпитаксиальной алмазной пленки составляет ∼ 4.6 nm [17].…”

Section: Introductionunclassified

“…Для получения алмазных пленок и частиц с центрами окраски широко используется метод химического газофазного осаждения (CVD). Это, в первую очередь, связано с возможностью контролируемого введения центров окраски [17,21]. К другим важным достоинствам различных модификаций метода CVD относятся: варьирование толщины алмазных пленок и размера алмазных частиц (от нескольких десятков нанометров до сотен микрон), осаждение алмаза на неалмазных подложках сложной формы, возможность изменения параметров синтеза в процессе роста и in-situ оптический контроль размера алмазных частиц.…”

Section: Introductionunclassified

Фотолюминесценция Центров Окраски Германий-Вакансия В Полученных Химическим Газофазным Осаждением Алмазных Частицах

Грудинкин¹,

Феоктистов²,

Богданов³

et al. 2020

Физика Твердого Тела

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Hot Filament Chemical Vapor Deposition technique was used to synthesize diamond particles with germanium-vacancy color centers on a germanium substrate. The formation of color centers occurred during the growth of diamond particles due to the incorporation of germanium atoms formed as a result of a crystalline germanium wafer etching with atomic hydrogen. The conditions of Chemical Vapor Deposition process which affect the photoluminescence of color centers of germanium vacancy in diamond particles, are considered. The highest photoluminescence intensity of germanium-vacancy color centers was achieved for diamond particles obtained on a substrate at a surface temperature close to the melting temperature of germanium. The photoluminescence spectra of the diamond particles also showed lines presumably associated with the optical centers which contain tungsten.

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Growth of polycrystalline and single-crystal CVD diamonds with bright photoluminescence of Ge-V color centers using germane GeH4 as the dopant source

Cited by 46 publications

References 51 publications

Quantum nanophotonics with group IV defects in diamond

Quantum nanophotonics with group IV defects in diamond

Tailoring of Typical Color Centers in Diamond for Photonics

Фотолюминесценция Центров Окраски Германий-Вакансия В Полученных Химическим Газофазным Осаждением Алмазных Частицах

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