Monoisotopic Ensembles of Silicon-Vacancy Color Centers with Narrow-Line Luminescence in Homoepitaxial Diamond Layers Grown in H2–CH4–[x]SiH4 Gas Mixtures (x = 28, 29, 30)

Ralchenko, V.G.; Седов, В. С.; Martyanov, Artem; Bolshakov, A. P.; Болдырев, К. Н.; Кривобок, В. С.; Nikolaev, S. N.; Bolshedvorskii, Stepan V.; Rubinas, Olga R.; Акимов, А. В.; Khomich, А.А.; Bushuev, E.V.; Khmelnitsky, R. A.; Konov, V. I.

doi:10.1021/acsphotonics.8b01464

Cited by 31 publications

(28 citation statements)

References 46 publications

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“…Up to date, most coherent control experiments for split‐vacancy centers are implemented on SiV − color center, mainly due to its early identification and mature fabrication techniques, including ion implantation, and chemical vapor deposition (CVD) growth via deliberately doping with silane or via silicon contamination . Similarly, GeV − color center can also be created via ion implantation or via high‐pressure high‐temperature (HPHT) synthetic process .…”

Section: Coherent Control Of Xv− Color Centermentioning

confidence: 99%

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

2019

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One ultimate goal of quantum information processing is to construct a quantum network for direct sharing of quantum information between distant parties based on stationary qubits for information storage and flying qubits for information transmission. This requires long‐lived quantum memories, efficient light–matter interface, and deterministic quantum gate operations. Among matter qubits, the electron spin of nitrogen vacancy center in diamond is an appealing option for its long coherence time at room temperature, deterministic microwave control, and optical preparation and readout of the qubit. However, its poor optical properties, including weak zero‐phonon‐line emission and large spectral diffusion, limit its potential for large‐scale deployment in quantum nodes. This has motivated the investigation for alternative quantum emitters that combine long‐time memory and coherent optical properties together. The emerging group‐IV split‐vacancy color centers in diamond, such as silicon‐vacancy, germanium‐vacancy, tin‐vacancy, and lead‐vacancy centers, are promising candidates of this ongoing exploration. These quantum emitters simultaneously possess microsecond spin coherence time and optically bright transitions with narrow linewidths. This review reports recent efforts on extending the spin coherence time of these color centers via temperature, strain, and charge control, which paves the road towards constructing solid‐based matter–photon interface for quantum network applications.

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Section: Coherent Control Of Xv− Color Centermentioning

confidence: 99%

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

2019

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“…laser absorption and/or optical emission spectroscopy measurements [6][7][8][9] of the densities of selected gas phase species in their ground and/or excited states) and complementary plasma modelling. [6][7][8]10 Silicon is a common trace element in CVD-grown diamond, [11][12][13][14][15][16][17][18] arising either adventitiouslyby etching from the silicon substrate on which diamond is commonly grown or from silica windows or walls of the MW reactor during hydrogen termination and/or growth of diamondor by design if, for example, SiH4 is added to the process gas mixture. The silicon-vacancy (SiV) defect, wherein a Si atom is located in a site within the diamond lattice corresponding to two missing carbon atoms (i.e.…”

Section: Introductionmentioning

confidence: 99%

Optical Emission Imaging and Modeling Investigations of Microwave-Activated SiH₄/H₂ and SiH₄/CH₄/H₂ Plasmas

et al. 2020

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Silicon is a known trace contaminant in diamond grown by chemical vapor deposition (CVD) methods.Deliberately Si-doped diamond is currently attracting great interest because of the attractive optical properties of the negatively charged silicon-vacancy (SiV − ) defect. This work reports in-depth studies of microwave activated H2 plasmas containing trace (10-100 ppm) amounts of SiH4, with and without a few % of CH4, operating at pressures and powers relevant for contemporary diamond CVD, using a combination of experiment (spatially resolved optical emission (OE) imaging) and two-dimensional

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“…An efficient way of meeting this requirement is to dope sufficient Si atoms or SiV centers in diamonds, utilizing a silicon-containing gas precursor. [11,12] However, due to the large refractive index (about 2.4) of diamonds as well as the formation of sp 2 amorphous carbon or graphite phase, efficient PL extraction of color centers in polycrystalline diamond films remains a challenge. [13][14][15][16] Numerous approaches have been proposed to improve the PL emission of color centers.…”

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confidence: 99%

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Yang

et al. 2021

Advanced Optical Materials

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To date, researchers have confirmed the presence of more than 500 color centers. [8] Among them, the silicon-vacancy (SiV) color center exhibits an optical emission with a zero-photo line (ZPL) centered at 738 nm along with a narrow peak width at room temperature, which concentrates more than 70% of its signals. [9,10] This means that SiV centers have excellent performance in the areas of bio-labeling and nanothermometry. Generally, these applications demand high concentration or photoluminescence (PL) intensity. An efficient way of meeting this requirement is to dope sufficient Si atoms or SiV centers in diamonds, utilizing a silicon-containing gas precursor. [11,12] However, due to the large refractive index (about 2.4) of diamonds as well as the formation of sp 2 amorphous carbon or graphite phase, efficient PL extraction of color centers in polycrystalline diamond films remains a challenge. [13][14][15][16] Numerous approaches have been proposed to improve the PL emission of color centers. Of these, the etching of sp 2 carbon species to optimize crystalline quality has been confirmed to remarkably increase PL attributes in nanocrystalline diamonds. [15] Another approach to optimizing the PL emission of color centers in nanocrystalline diamond is to alter the surface termination from hydrogen to oxygen. [17][18][19][20][21] In comparison, these two methods have a negligible effect on increasing the PL of monocrystalline/polycrystalline diamonds. Other approaches, such as coupling color centers with photonic crystals [22][23][24] or micro/nano structures, [14,25] have been demonstrated to be viable for increasing the optical collection efficiency of microsized diamonds. For example, Ondic et al. [23] prepared 2D polycrystalline diamond photonic crystal slabs using a bottom-up approach, tuning the leaky modes to increase the PL intensity of SiV centers by 14 fold. However, the design of an accurate mask is highly critical in this approach to the subsequent etching and deposition processes, which is complicated and of high cost. Additionally, Insitu formed hetero-particles, [26] as well as diamond nanoparticles, [27,28] were also utilized as masks to fabricate 1D nanostructures during the reactive ion etching of diamond films. The realization of such a structure was dependent on the conductivity of the film. [27] Recently, it was reported that by annealing diamond particles in the air, a nanopyramid or irregular nanoporous structure was formed on their surface, resulting in aThe optically active silicon-vacancy (SiV) center in diamonds is an excellent candidate for quantum photonics and sensing applications. To date, optimizing the photoluminescence (PL) collection efficiency of SiV centers has proven difficult. To address this issue, the current study presents a simple two-step method for preparing single-crystalline diamond nanoneedle arrays. In the first step, silicon-doped (001) textured diamond films are deposited with a mixture of microcrystalline and nanocrystalline grains in a microwave plasma CVD (MPCVD)...

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Monoisotopic Ensembles of Silicon-Vacancy Color Centers with Narrow-Line Luminescence in Homoepitaxial Diamond Layers Grown in H₂–CH₄–^[x]SiH₄ Gas Mixtures (x = 28, 29, 30)

Cited by 31 publications

References 46 publications

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Optical Emission Imaging and Modeling Investigations of Microwave-Activated SiH₄/H₂ and SiH₄/CH₄/H₂ Plasmas

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

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Monoisotopic Ensembles of Silicon-Vacancy Color Centers with Narrow-Line Luminescence in Homoepitaxial Diamond Layers Grown in H2–CH4–[x]SiH4 Gas Mixtures (x = 28, 29, 30)

Cited by 31 publications

References 46 publications

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Optical Emission Imaging and Modeling Investigations of Microwave-Activated SiH4/H2 and SiH4/CH4/H2 Plasmas

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

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Monoisotopic Ensembles of Silicon-Vacancy Color Centers with Narrow-Line Luminescence in Homoepitaxial Diamond Layers Grown in H₂–CH₄–^[x]SiH₄ Gas Mixtures (x = 28, 29, 30)

Optical Emission Imaging and Modeling Investigations of Microwave-Activated SiH₄/H₂ and SiH₄/CH₄/H₂ Plasmas