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A new erasing method for a simple stacked gate Flash EEPROMs is described. The method makes use of avalanche hot carrier injection after erasure by Fowler-Nordheimv-N) tunneling. The threshold voltages converge to a certain "steady-state" as a result of the injection. The steady-state is caused by a balance between the avalanche hot electron injection into the floating gate and the avalanche hot hole injection into the floating gate, and can be controlled easily by the channel doping. Tight distribution of threshold voltages and stable erasure without over-erased cells are demonstrated by applying cells using 0.6pm CMOS technology. In addition, short erase time is realized using the new erase sequence.