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We discuss the characteristics of In0.17Al0.83N/GaN High Electron Mobility Transistors (HEMTs) with barrier thicknesses between 33 nm and 3 nm, grown on sapphire substrates by MOCVD. The maximum drain current (at VG = +2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface depletion effect. Full pinch-off and low leakage is observed. Even with 3nm ultra thin barrier the heterostructure and contacts are thermally highly stable (up to 1000°C).

Abstract:The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.