Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub, Farid; Carlin, J.-F.; Gaquière, C.; Grandjean, N.; Kohn, E.

doi:10.2174/1874129000802010001

Cited by 67 publications

(54 citation statements)

References 28 publications

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“…In addition, a high thermal and chemical stability has been demonstrated for lattice-matched InAlN/ GaN HEMT, and devices operate up to 1000 C without showing serious performance degradation. 6 Motivated by these potential advantages mentioned above, significant progress with respect to device performance and structure has been achieved with this new InAlN/ GaN heterostructures during last five years. Alomari et al 5 reported a maximum drain current density of 2.4 A/mm in device with thermally generated oxide recess, while Wang et al 7 demonstrated a transconductance exceeding 800 mS/ mm in enhancement-mode device.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications

Xue

Zhang

et al. 2012

Journal of Applied Physics

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In our previous work [J. S. Xue et al., Appl. Phys. Lett. 100, 013507 (2012)], superior electron-transport properties are obtained in InAlN/GaN/InAlN/GaN double-channel (DC) heterostructures grown by pulsed metal organic chemical vapor deposition (PMOCVD). In this paper, we present a detailed fabrication and systematic characterization of high electron mobility transistors (HEMTs) fabricated on these heterostructures. The device exhibits distinct DC behavior concerning with both static-output and small-signal performance, demonstrating an improved maximum drain current density of 1059 mA/mm and an enhanced transconductance of 223 mS/mm. Such enhancement of device performance is attributed to the achieved low Ohmic contact resistance as low as 0.33 ± 0.05 Ω·mm. Moreover, very low gate diode reverse leakage current is observed due to the high quality of InAlN barrier layer deposited by PMOCVD. A current gain frequency of 10 GHz and a maximum oscillation frequency 21 GHz are also observed, which are comparable to the state-of-the-art AlGaN/GaN-based DC HEMT found in the literature. The results demonstrate the great potential of PMOCVD for application in InAlN-related device’s epitaxy.

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Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications

Xue

Zhang

et al. 2012

Journal of Applied Physics

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“…[1][2][3][4][5] The reason for the drive to InAlN is twofold. [1][2][3][4][5] The reason for the drive to InAlN is twofold.…”

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confidence: 99%

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Leach

Zhu

et al. 2009

Applied Physics Letters

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We report on high electric field stress measurements at room temperature on InAlN/AlN/GaN heterostructure field effect transistor structures. The degradation rate as a function of the average electron density in the GaN channel (as determined by gated Hall bar measurements for the particular gate biases used), has a minimum for electron densities around 1×1013 cm−2, and tends to follow the hot phonon lifetime dependence on electron density. The observations are consistent with the buildup of hot longitudinal optical phonons and their ultrafast decay at about the same electron density in the GaN channel. In part because they have negligible group velocity, the build up of these hot phonons causes local heating, unless they decay rapidly to longitudinal acoustic phonons, and this is likely to cause defect generation which is expected to be aggravated by existing defects. These findings call for modified approaches in modeling device degradation.

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“…Moreover, great efforts have been made in the investigation of lattice-matched InAlN-barrier HEMTs since they could potentially present no strain, which could improve the heterostructure stability [10] and long term reliability. A higher 2-dimensional electron gas (2DEG) density would be induced mainly by the larger spontaneous polarization compared to the AlGaN barrier [10][11][12]. Jardel et al presented devices with excellent power performance even in Ku band [13], and Lee et al reported lattice-matched InAlN/GaN HEMTs with an InGaN back barrier on a SiC substrate showing a record f T of 300 GHz for 30 nm gate length devices [14].…”

Section: Introductionmentioning

confidence: 99%

Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

Martin-Horcajo

Wang

Boscá

et al. 2015

Semicond. Sci. Technol.

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Trapping effects were evaluated by means of pulsed measurements under different quiescent biases for GaN/AlGaN/GaN and GaN/InAlN/GaN. It was found that devices with an AlGaN barrier underwent an increase in the on-resistance, and a drain current and transconductance reduction without measurable threshold voltage change, suggesting the location of the traps in the gate-drain access region. In contrast, devices with an InAIN barrier showed a transconductance and a decrease in drain associated with a significant positive shift of threshold voltage, indicating that the traps were likely located under the gate region; as well as an onresistance degradation probably associated with the presence of surface traps in the gate-drain access region. Furthermore, measurements of drain current transients at different ambient temperatures revealed that the activation energy of electron traps was 0.43 eV and 0.38 eV for AlGaN and InAIN barrier devices, respectively. Experimental and simulation results demonstrated the influence of device geometry on the observed trapping effects, since devices with larger gate lengths and gate-to-drain distance values exhibited less noticeable charge trapping effects.

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Status of the Emerging InAlN/GaN Power HEMT Technology

Cited by 67 publications

References 28 publications

Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications

Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

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