Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

Daumiller, I.; Kirchner, C.; Kamp, M.; Ebeling, Karl Joachim; Kohn, E.

doi:10.1109/55.784448

Cited by 161 publications

(73 citation statements)

References 5 publications

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“…However, early experiments had also already indicated that the failure of the devices could be due to the degradation of the heterostructure rather than the gate diode [32]. The high stability of gate contacts is also confirmed by the use of Pt-AlGaN/GaN diodes in high temperature gas sensors of up to 800…”

Section: Schottky Contactsmentioning

confidence: 95%

Testing the Temperature Limits of GaN-Based HEMT Devices

Maier

Alomari

Grandjean

et al. 2010

IEEE Trans. Device Mater. Relib.

127

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Section: Schottky Contactsmentioning

confidence: 95%

Testing the Temperature Limits of GaN-Based HEMT Devices

Maier

Alomari

Grandjean

et al. 2010

IEEE Trans. Device Mater. Relib.

127

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“…No presence of Ni and Au has been detected in the InAlN layer which means that no noticeable inter-diffusion occurred at such a high temperature. Unlike AlGaN/GaN devices, where contacts have been stable up to the highest temperature of operation (800 °C [26]), but the 2DEG density and maximum channel current density have started to degrade first, the lattice matched InAlN/GaN heterostructure appears to be extremely stable. No degradation of the polarization fields in the two materials, the heterojunction or the 2DEG density is observed.…”

Section: High Temperature Performancementioning

confidence: 98%

Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub¹,

Carlin²,

Gaquière³

et al. 2008

TOEEJ

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Abstract:The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.

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“…Since these device models directly related to the physics of the device thus selection of the proper model for the device and its parameters plays a crucial role in the simulation. Several research groups have studied DC operation of AlGaN/GaN HEMTs on different substrates (sapphire, [16][17][18][19] SiC 19 ). Faraclas et al 20 reported 2-D DC simulation and transfer characteristics along with an agreement to the experimental data.…”

Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

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Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

Cited by 161 publications

References 5 publications

Testing the Temperature Limits of GaN-Based HEMT Devices

Testing the Temperature Limits of GaN-Based HEMT Devices

Status of the Emerging InAlN/GaN Power HEMT Technology

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

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