Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Nigam, Adarsh; Bhat, Thirumaleshwara N.; Rajamani, Saravanan; Dolmanan, Surani Bin; Tripathy, S.; Kumar, Mahesh

doi:10.1063/1.4990868

Cited by 66 publications

(33 citation statements)

References 38 publications

(39 reference statements)

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“…Therefore, self-heating is induced leading to thermal cross-talk (thermal coupling) between individual gate fingers. This effect becomes serious if it persists and leads to the degradation of device performance or an irreversible damage and this is compared with similar results in the literature using TCAD simulator tool according to Figure 7 and good agreement is achieved [44][45][46]. The thermal profile simulated by TLM method in two dimensions (2-D) is shown in Figure 6a.…”

Section: Simulation Results and Discussionsupporting

confidence: 61%

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

Belkacemi

Hocine

2018

JLPEA

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A three-dimensional thermal simulation investigation for the thermal management of GaN-on-SiC monolithic microwave integrated circuits (MMICs) of consisting multi-fingers (HEMTs) is presented. The purpose of this work is to demonstrate the utility and efficiency of the three-dimensional Transmission Line Matrix method (3D-TLM) in a thermal analysis of high power AlGaN/GaN heterostructures single gate and multi-fingers HEMT SSPA (solid state power amplifiers). The self-heating effects induce thermal cross-talk between individual fingers in multi-finger AlGaN/GaN that affect device performance and reliability. Gate-finger temperature differences only arise after a transient state, due to the beginning of thermal crosstalk which is attributed to the finite rate of heat diffusion between gate fingers. The TLM method accounts for the real geometrical structure and the non-linear thermal conductivities of GaN and SiC in order to improve the realistic calculations accuracy heat dissipation and thermal behavior of the device. In addition, two types of heat sources located on the top of GaN layer are considered in thermal simulations: Nano-scale hotspot as a pulsed wave heat source under gate and micro-scale hotspot as a continuous wave heat source, between gate and drain. Heat diffusion however, occurs not only between individual gate fingers (inter-finger) in a multi-finger HEMT, but also within each gate finger (intra-finger). To compare results, a Micro-Raman Spectroscopy experience is conducted to obtain a detailed and accurate temperature distribution. Good agreement between the microscopic spectral measurement and TLM simulation results is observed by accepting an error less than 2.2% relative to a maximum temperature. Results show that the 3D-TLM method is suitable for understanding heat management in particular for microwave devices AlGaN/GaN HEMTs SSPA amplifier. TLM method helps to select and locates the expected hot spots and to highlight the need of thermal study pre-design in order to minimize the system-level thermal dissipation and lead therefore to higher reliability.

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Section: Simulation Results and Discussionsupporting

confidence: 61%

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

Belkacemi

Hocine

2018

JLPEA

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“…The highest cutoff frequency of an organic transistor is f T = 40 MHz so far 6 , but optimized devices and geometries should allow for an operation beyond 100 MHz as already demonstrated by using inorganic materials 7 – 9 . For devices based on inorganic semiconductors, heat dissipation is a major concern since high charge carrier mobilities allow for very high current densities 10 . Two types of behavior are possible: On the one hand, field-effect transistors where the charge carrier mobility and the electrical conductivity decrease with temperature, e.g.…”

Section: Introductionmentioning

confidence: 99%

Non-Linear Self-Heating in Organic Transistors Reaching High Power Densities

Klinger

Fischer

Kleemann

et al. 2018

Sci Rep

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The improvement of the performance of organic thin-film transistors is driven by novel materials and improved device engineering. Key developments are a continuous increase of the charge carrier mobility, a scale-down of transistor dimensions, and the reduction of contact resistance. Furthermore, new transistor designs such as vertical devices are introduced to benefit from drastically reduced channel length while keeping the effort for structuring moderate. Here, we show that a strong electrothermal feedback occurs in organic transistors, ultimately leading to output characteristics with regions of S-shaped negative differential resistance. For that purpose, we use an organic permeable-base transistor (OPBT) with outstanding current densities, where a strong and reproducible, non-linear electrothermal feedback is revealed. We derive an analytical description of the temperature dependent current-voltage behavior and offer a rapid investigation method for material systems, where a temperature-activated conductivity can be observed.

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“…The advanced GaN-based devices are promising to use for high temperature, frequency, power and microwave applications. In fact, a high potential of these devices is deteriorated by self-heating during the HEMT operation, this has influence on the electrical characteristics as well as device reliability [1][2][3], temperature is one of the dominant factor here. A high thermal conductance of particular materials, especially substrate, plays significant role in the power heat transfer.…”

Section: Channel Temperature Analysis Of Algan/gan Hemts In Quasi-stamentioning

confidence: 99%

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Florovic

Szobolovszký

Kováč

et al. 2018

Journal of Electrical Engineering

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GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.

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Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Cited by 66 publications

References 38 publications

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

Non-Linear Self-Heating in Organic Transistors Reaching High Power Densities

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

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