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A detailed study of the ZnIn2S4 photoluminescence in the temperature range 10 to 450 K is presented; the emission spectra consist of a single, wide and asymmetrical band centered, for T = 80 K, at 1.6 to 1.8 eV. The temperature dependence of its peak energy and of its halfwidth shows an unusual behaviour. The emission band shifts towards lower energies when the excitation intensity decreases; in time resolved spectra, a red shift is also observed when the delay time after the end of the pulsed excitation increases. It is shown that these trends, typical of heavily doped semiconductors, can be interpreted only assuming that ZnIn2S4 has a “quasi disordered” nature; this characteristic of ZnIn2S4 is also suggested by the analysis of its optical, electrical, and photoelectronic properties. Finally, a semiempirical model allowing a satisfactory fit of the emission band shape is presented.

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A 65nm NOR Flash technology, featuring a true 10λ², 0.042µm² cell, is presented for the first time for 1bit/cell and 2bit/cell products. Advanced 193nm lithography, floating gate self aligned STI, cobalt salicide and three levels of copper metallization allow the integration with a high density and high performance 1.8V CMOS. IntroductionThe continuous expansion and the evolution of wireless applications ask for increasing the density and the performances of Flash memories. In this paper we present a 65nm NOR Flash technology with a cell as small as 0.042µm² (0.021µm² per bit in multilevel memories), that is the smallest presented so far (1). Use of 193nm lithography with high NA, floating gate self aligned to STI isolation, cobalt salicide and three levels of copper interconnections allow us to keep following the 10λ² roadmap for NOR cell down to this generation, integrating for the first time at this technology node high performance logic for low voltage 1.8V operation suitable for System On Chip applications.