At a low MBE growth temperature (400°C), an anisotropic composition modulation has been observed by Transmission Electron Microscopy (TEM) on AIlnAs layers. Optical measurements have been performed on these samples and compared with classical AllnAs grown at 530°C. We show the clustering “organization” on the low temperature layers and we propose some hypothesis to explain the composition modulation effects on the AlInAs optical properties.
We have performed low temperature photoreflectance spectra on several MBE-InAlAs layers lattice matched to InP. Unusual lineshapes of PR spectra are observed at temperatures below 40K, characterized by a step at the InAlAs band gap energy. This step is shown to be related to a strong modification of the photo luminescence background of the photoreflectance spectra. This modification is attributed to an effect of carrier localization due to clustering effects in the InAlAs layers
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