Steplike Lineshape of Low Temperature Photoreflectance Spectra of InAlAs

Baltagi, Y.; Bearzi, E.; Bru‐Chevallier, C.; Benyattou, T.; Guillot, G.; Harmand, J.C.

doi:10.1557/proc-406-333

MRS Proc.

1995

DOI: 10.1557/proc-406-333

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Steplike Lineshape of Low Temperature Photoreflectance Spectra of InAlAs

Y. Baltagi

E. Bearzi

C. Bru‐Chevallier

et al.

Abstract: We have performed low temperature photoreflectance spectra on several MBE-InAlAs layers lattice matched to InP. Unusual lineshapes of PR spectra are observed at temperatures below 40K, characterized by a step at the InAlAs band gap energy. This step is shown to be related to a strong modification of the photo luminescence background of the photoreflectance spectra. This modification is attributed to an effect of carrier localization due to clustering effects in the InAlAs layers

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“…PL and PR spectra of the as-grown GaInNAs/GaAs SQW are shown, respectively, in Figs 9 and attribution of the E 1 H 1 energy is less accurate ͑taken in the middle of the step and indicated by dashed arrows͒. Figure 2 shows the temperature dependence of the PL peak energy of the GaInNAs/GaAs SQW before and after annealing.…”

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confidence: 99%

Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

Grenouillet

Bru‐Chevallier

Guillot

et al. 2000

Applied Physics Letters

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195

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We report an anomalous temperature dependence of the photoluminescence (PL) spectrum of a 7 nm Ga0.72In0.28N0.028As0.972/GaAs single quantum well. The PL peak energy exhibits an inverted S-shape dependence with temperature. Below 100 K, the PL integrated intensity shows a temperature dependence similar to that of amorphous semiconductors. The observed anomalous behavior is explained by a strong localization of carriers at low temperatures that could be induced by the presence of nitrogen. Thermal annealing does not significantly change the anomalous temperature dependence.

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mentioning

confidence: 99%

Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

Grenouillet

Bru‐Chevallier

Guillot

et al. 2000

Applied Physics Letters

Self Cite

195

119

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Evidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy

Chouaib¹,

Bru‐Chevallier

Benyattou

et al. 2003

MRS Proc.

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GaAsSb is a promising material for the base of a new generation of Heterojunction Bipolar Transistors (HBT) on InP, as it is expected to allow the elaboration of high-speed digital circuits (80 to 100 Gbits/s). Emitter-base interfaces between GaAsSb and InP need to be well controlled to ensure good performance of the HBT, and this requires a careful analysis of both material and interface quality. Photoluminescence (PL) experiments as a function of temperature and of power excitation density, as well as photoreflectance (PR) measurements are performed on GaAsSb/InP heterostructures in order to get information about ordering and segregation effects in antimonide alloys.From the PL recombination energy across the type II interface and at the GaAsSb band-edge, the band offset ΔEC between InP and GaAsSb is calculated. The evolution of the band to band PL recombination is studied as a function of temperature: the energy and intensity of the type I PL transition are shown to exhibit specific behaviors, which are typical of carrier localization effects in semiconductor alloys. At low temperature, the shape of the PR spectrum results in an atypical steplike background, which is analyzed as a band filling effect in consequence of the carrier localization on potential fluctuations.

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Steplike Lineshape of Low Temperature Photoreflectance Spectra of InAlAs

Cited by 2 publications

References 11 publications

Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

Evidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy

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