Proceedings of 8th International Conference on Indium Phosphide and Related Materials
DOI: 10.1109/iciprm.1996.492038
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On the origin of the semi-insulating behaviour of low-temperature In/sub 0.52/Al/sub 0.48/As grown by molecular beam epitaxy

C. Meva'a
1
,
M. Oustric
2
,
Pierre Viktorovitch
3
et al.
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