Low frequency noise sources in InAlAs/InGaAs MODFETs

Viktorovitch, P.; Rojo-Romeo, P.; Leclercq, Jean Louis; Letartre, Xavier; Tardy, J.; Oustric, M.; Gendry, M.

doi:10.1109/16.544379

Cited by 29 publications

(23 citation statements)

References 18 publications

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“…Therefore, for the design of nonlinear monolithic microwave integrated circuits (MMIC's) it is desirable to model the LF noise of the HEMT. To obtain correct noise models, a detailed noise analysis has been performed on InAlAs-InGaAs HEMT's [4]- [6]. On the other hand, to improve the LF noise behavior of the HEMT, well selected technological parameters have to be optimized.…”

mentioning

confidence: 99%

Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMTs

Meer

Valenza²,

Zanden³

et al. 1998

IEEE Electron Device Lett.

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mentioning

confidence: 99%

Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMTs

Meer

Valenza²,

Zanden³

et al. 1998

IEEE Electron Device Lett.

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“…In an actual case, current in the device often includes 1/f noise [26][27][28][29] , which is generated by a large number of traps distributed uniformly relative to the time constant 30) . Although RTS noise caused by the above mechanism might be small and difficult to distinguish from other noise, it shows a Lorentzian spectrum of 1/f 2 slope 31,32) .…”

Section: Conceptmentioning

confidence: 99%

Detection of discrete surface charge dynamics in GaAs-based nanowire through metal-tip-induced current fluctuation

Sato¹,

Yin²,

Kuroda³

et al. 2015

Jpn. J. Appl. Phys.

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We investigated the detection of discrete charge dynamics of an electron trap in a GaAs-based nanowire surface through current fluctuation induced by a metallic scanning probe tip. An equivalent circuit model indicated that the charge state in the surface strongly reflects the channel potential when the local surface potential is fixed by the metal tip, which suggests that random charging and discharging dynamics of the trap appears as random telegraph signal (RTS) noise in the nanowire current. Experimental demonstration of the concept was carried out using a GaAs-based nanowire and an atomic force microscope (AFM) system with a conductive tip. We observed the RTS noise in the drain current and superposition of the Lorentzian component in the noise spectrum when the metal tip was in contact with the nanowire surface at specific positions. The obtained results indicate the possibility of detecting charge dynamics of the individual surface trap in semiconductor devices.2

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“…In that case D eff is the effective density of the traps into SiO 2 under the gate. In case of the InGaAs MOD-FETs, traps can be located either on the quantum well interface 10 or in adjacent InAlAs layers ͑see Fig. 1͒.…”

Section: ͑6͒mentioning

confidence: 99%

“…11,12 Gate leakage current was found to contribute to the output low frequency drain current noise in some cases. 10 In certain devices, the gate voltage dependence of the 1 / f noise is well described by the model suggested in Ref. 15 and based on empirical Hooge relation 16…”

Section: Introductionmentioning

confidence: 96%

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Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Levinshteǐn¹,

Rumyantsev²,

Tauk³

et al. 2007

Journal of Applied Physics

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We report on the low frequency ͓1/ f and generation-recombination ͑GR͔͒ noise in InAlAs/InGaAs modulation doped field effect transistors with a 50-nm gate length. The characteristic capture and emission times of the GR noise depended on the gate voltage. Measurements of the noise as a function of the gate voltage showed that the gate leakage current, contacts, and ungated sections of the channel did not contribute to the 1 / f noise. The gate voltage dependence of the 1 / f noise agreed well with the model of number of carriers fluctuations as a source of the 1 / f noise. An effective density of traps responsible for the 1 / f noise was found to be D eff Ϸ 2.7ϫ 10 12 cm −2 eV −1 .

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Low frequency noise sources in InAlAs/InGaAs MODFETs

Cited by 29 publications

References 18 publications

Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMTs

Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMTs

Detection of discrete surface charge dynamics in GaAs-based nanowire through metal-tip-induced current fluctuation

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

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