Articles you may be interested inSuppression of metastable-phase inclusion in N-polar ( 000 1 ¯ ) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Appl. Phys. Lett. 106, 222102 (2015); 10.1063/1.4922131 Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures Appl. Phys. Lett. 101, 212107 (2012); 10.1063/1.4768291 Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire Appl. Phys. Lett. 83, 33 (2003); 10.1063/1.1588370 Dislocation behavior in InGaN/GaN multi-quantum-well structure grown by metalorganic chemical vapor deposition Appl.Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor depositionThe morphological evolution of InGaN/GaN multiple-quantum wells ͑MQWs͒ grown by metalorganic chemical vapor deposition has been examined by atomic force microscopy and cross-sectional transmission electron microscopy. We have determined that GaN barrier growth at low temperature ͑ϳ800°C͒ in a H 2 -free environment results in a microstructure that consists of not only V-defects, but also inclusions embedded within V-defects that originate at the first InGaN-to-GaN growth interface. Propagation of the inclusions results in progressive deterioration of the surface morphology and reduced MQW thermal stability as quantum-well periods are added. Raising the GaN barrier growth temperature to 900°C or adding H 2 suppresses inclusion propagation entirely and preserves two-dimensional step-flow growth mode, resulting in superior morphology and higher thermal stability.

Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

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