Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

Abstract

Articles you may be interested inSuppression of metastable-phase inclusion in N-polar ( 000 1 ¯ ) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Appl. Phys. Lett. 106, 222102 (2015); 10.1063/1.4922131 Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures Appl. Phys. Lett. 101, 212107 (2012); 10.1063/1.4768291 Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire Appl. Phys. Lett. 83, 33 (2003); 10.1063/1.1588370 Dislocation behavior in InGaN/GaN multi-quantum-well structure grown by metalorganic chemical vapor deposition Appl.Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor depositionThe morphological evolution of InGaN/GaN multiple-quantum wells ͑MQWs͒ grown by metalorganic chemical vapor deposition has been examined by atomic force microscopy and cross-sectional transmission electron microscopy. We have determined that GaN barrier growth at low temperature ͑ϳ800°C͒ in a H 2 -free environment results in a microstructure that consists of not only V-defects, but also inclusions embedded within V-defects that originate at the first InGaN-to-GaN growth interface. Propagation of the inclusions results in progressive deterioration of the surface morphology and reduced MQW thermal stability as quantum-well periods are added. Raising the GaN barrier growth temperature to 900°C or adding H 2 suppresses inclusion propagation entirely and preserves two-dimensional step-flow growth mode, resulting in superior morphology and higher thermal stability.

High Brightness GaN-Based Light-Emitting Diodes

“…At such a low grown temperature of GaN layers (i.e., 800 C), large number of hexagonal pits can be seen on the top surface of the LED surface. The formation of these hexagonal V-shape pits could be attributed to the fact that Ga atoms might not have enough energy to migrate to proper sites [17], [18]. In order to measure the change of surface roughness of p-type GaN surface caused by grown temperature, atomic force microscopy (AFM) measurements were performed.…”

The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

“…that strive for smooth planar morphology and sharp interfaces within the InGaN/GaN stack. The growth of GaN barriers at elevated temperature [5], and introducing hydrogen ðH 2 ) during barrier growth [6,7] are believed to be the most efficient approaches for improving the surface morphology and thermal stability of InGaN/GaN QWs.…”

High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

“…This particular morphology has already been observed for InGaN / GaN QWs grown by MOVPE. 16 In Fig. 2͑a͒ we present AFM section profiles corresponding to the AFM images in Figs.…”