Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

Kadinski, L.; Merai, V.; Parekh, A.; Ramer, J.; Armour, E.; Stall, R. A.; Gurary, A.; Galyukov, A.O.; Makarov, Yu.N.

doi:10.1016/j.jcrysgro.2003.11.083

Cited by 59 publications

(43 citation statements)

References 3 publications

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“…Furthermore, the empirical equations for predicting the heat and mass transfer coefficients for multiple impinging jets and the hot-wall chamber were proposed by Martin [11] and by Hu and Hüttinger. [12] Fluid flow and heat transfer in various types of CVD reactors [13] and RTP processors have been the focus of many investigations. Özturk et al [14] proposed that three challenging issues were needed to be addressed: (1) to obtain a uniform thin film, the thickness of the velocity, temperature, and concentration boundary layers [15] over the wafer must be uniform; (2) the wafer must be at a uniform temperature to reduce the thermal stresses; and (3) for interface abruptness, the gas flow in the reactor must be free of any vortices to minimize gas residence time.…”

Section: Introductionmentioning

confidence: 99%

Visualization of Vortex Flow Patterns with a Uniformly Perforated Showerhead in a Model Lamp Heat, Single‐Wafer Thermal Processor

Cheng

Lin

Yang

2007

Chemical Vapor Deposition

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Following the rapid progress in the growth of semiconductor thin crystal films, rapid thermal (RT) CVD not only allows for minimization of processing and cycle time, but also enables a significant reduction in the thermal budget. The flow recirculation in the processing chamber driven by the large buoyancy resulting from the temperature differences between the wafer and input gases is known to produce detrimental effects on the film properties. In this study, the proposed 8″ rapid thermal processor (RTP) with a showerhead inlet contains three basic types of flow patterns (plug, mixed, and buoyancy-induced flow). The physical parameters, gas flow rate, and pressure of processing chamber are investigated in detail.

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Section: Introductionmentioning

confidence: 99%

Visualization of Vortex Flow Patterns with a Uniformly Perforated Showerhead in a Model Lamp Heat, Single‐Wafer Thermal Processor

Cheng

Lin

Yang

2007

Chemical Vapor Deposition

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“…The first study on AlN/GaN HEMTs was reported by Smorchkova et al, who found a 2DEG density of up to 3.65 ×10 13 cm -3 for an AlN barrier thickness of 4.9 nm [5]. Furthermore, the AlGaN/InGaN/GaN HEMTs structure using an InGaN layer with higher mobility as a back-barrier layer or channel layer had been proposed [6,7]. It will substantially increase the carrier confinement ability at InGaN/GaN interface because of the formation of a back barrier by antidirection piezoelectric polarization effect [7].…”

mentioning

confidence: 99%

“…Furthermore, the AlGaN/InGaN/GaN HEMTs structure using an InGaN layer with higher mobility as a back-barrier layer or channel layer had been proposed [6,7]. It will substantially increase the carrier confinement ability at InGaN/GaN interface because of the formation of a back barrier by antidirection piezoelectric polarization effect [7]. However, the thickness of InGaN layer is limited due to the different lattice constants between InGaN and GaN materials.…”

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confidence: 99%

High‐performance AlGaN/AlN/GaN high electron mobility transistor with broad gate‐to‐source operation voltages

Tsai

Chiang

Wang

2015

Phys. Status Solidi C

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In this article, a high‐performance AlGaN/AlN/GaN high electron mobility transistor (HEMT) with broad gate‐to‐source operation voltages is fabricated and demonstrated. The experimental results exhibit a maximum extrinsic transconductance of 94.2 mS/mm at VGS = ‐2.58 V and a threshold voltage of ‐3.68 V at drain output current of 1 mA/mm.The insertion of an AlN interfacial layer can enhance the carrier confinement ability in channel and extend the gate operation voltage to +5 V. Furthermore, the effect of gate recess on device performance is investigated by two‐dimensional simulation. The simulated results show that the AlGaN/AlN/GaN HEMT with gate recess structure has higher equivalent Schottky barrier height, larger electron concentration in channel, larger drain output current and transconductance as compared with the device without gate recess structure. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Theoretical studies have been performed about the growth mechanisms of such thin films based on the numerical simulation of computational fluid dynamics (CFD) of InP, GaAs, GaN, ZnO, and Al [5][6][7][8][9][10][11]; however, the dynamic mechanism of GaInP film growth is still less well understood from the point of view of CFD numerical simulation. Considerable experimental researches have been performed on the growth of GaInP thin films [1,[12][13][14][15].…”

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confidence: 99%

The multiscale simulation of metal organic chemical vapor deposition growth dynamics of GaInP thin film

2010

Sci. China Phys. Mech. Astron.

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As a Group III-V compound, GaInP is a high-efficiency luminous material. Metal organic chemical vapor deposition (MOCVD) technology is a very efficient way to uniformly grow multi-chip, multilayer and large-area thin film. By combining the computational fluid dynamics (CFD) and the kinetic Monte Carlo (KMC) methods with virtual reality (VR) technology, this paper presents a multiscale simulation of fluid dynamics, thermodynamics, and molecular dynamics to study the growth process of GaInP thin film in a vertical MOCVD reactor. The results of visualization truly and intuitively not only display the distributional properties of the gas' thermal and flow fields in a MOCVD reactor but also display the process of GaInP thin film growth in a MOCVD reactor. The simulation thus provides us with a fundamental guideline for optimizing GaInP MOCVD growth. metal organic chemical vapor deposition, computational fluid dynamics, kinetic Monte Carlo, virtual reality, multiscale simulation, GaInP thin film growth

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Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

Cited by 59 publications

References 3 publications

Visualization of Vortex Flow Patterns with a Uniformly Perforated Showerhead in a Model Lamp Heat, Single‐Wafer Thermal Processor

Visualization of Vortex Flow Patterns with a Uniformly Perforated Showerhead in a Model Lamp Heat, Single‐Wafer Thermal Processor

High‐performance AlGaN/AlN/GaN high electron mobility transistor with broad gate‐to‐source operation voltages

The multiscale simulation of metal organic chemical vapor deposition growth dynamics of GaInP thin film

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