The effect of edge roughness of permalloy nanowires can be quantified through the measurement of asymmetry in transverse domain walls.

Hexagonal boron nitride nanowall thin films were deposited on Si(100) substrates using a Ar(51%)/N2(44%)/H2(5%) gas mixture by unbalanced radio frequency sputtering. The effects of various target-to-substrate distances, substrate temperatures, and substrate tilting angles were investigated. When the substrate is close to the target, hydrogen etching plays a significant role in the film growth, while the effect is negligible for films deposited at a farther distance. The relative quantity of defects was measured by a non-destructive infrared spectroscopy technique that characterized the hydrogen incorporation at dangling nitrogen bonds at defect sites in the deposited films. Despite the films deposited at different substrate tilting angles, the nanowalls of those films were found to consistently grow vertical to the substrate surface, independent of the tilting angle. This implies that chemical processes, rather than physical ones, govern the growth of the nanowalls. The results also reveal that the degree of nanowall crystallization is tunable by varying the growth parameters. Finally, evidence of hydrogen desorption during vacuum annealing is given based on measurements of infrared stretching (E 1u) and bending (A 2u) modes of the optical phonons, and the H–N vibration mode.

A domain wall trap structure was found which is suitable for the field-driven single DW propagation between two narrow nanowires.

Hexagonal boron nitride (hBN) nanowalls were deposited by unbalanced radio frequency sputtering system on (100)-oriented silicon, nanocrystalline diamond films, and amorphous silicon nitride (Si 3 N 4 ) membranes. The hBN nanowall structures were found to grow vertically with respect to the surface of all of the substrates. To provide further insight into the nucleation phase and possible lattice distortion of the deposited films, the structural properties of the different interfaces were characterized by transmission electron microscopy.Hexagonal boron nitride (hBN) has a structure similar to graphite, in which B and N atoms are bound alternatively in in-plane hexagonal rings forming two dimensional (2D) sheets, which are held together by van der Waals forces, forming the hBN lattice. hBN can be synthesized into nanostructured films, such as nanowalls, with tunable properties depending on the growth parameters, to make it insulating, highly compressible, or to improve its lubricity [1,5]. Grown hBN structures have so far shown a considerable number of defects and disordered BN phases, i.e. amorphous and turbostratic boron nitride (aBN and tBN), particularly at the initial stages of thin film growth. The presence of those phases is largely dependent on dynamics of chemical reactions at the substrate surface [1]. A substrate material that reduces these defective phases, creating a direct interface to the hBN phase, is therefore highly desirable.Many excellent properties of diamond, such as a negative electron affinity on hydrogen terminated surfaces, mechanical hardness, chemical inertness, and good thermal conductivity

Phone: þ32 11 268875, Fax: þþ32 11 268899Utilization of Au and nanocrystalline diamond (NCD) as interlayers noticeably modifies the microstructure and field electron emission (FEE) properties of hexagonal boron nitride nanowalls (hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turnon field of 14.3 V mm À1 , attaining FEE current density of 2.58 mA cm À2 and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride (aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability.

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Structural and compositional characteristics of MgO-based magnetic tunnel junctions were characterized using advanced transmission electron and focused-ion beam microscopies. These junctions were fabricated from two ferromagnetic layers separated by a dielectric one and have a switchable resistance that depends upon the relative magnetizations of those two ferromagnetic layers. Certain etching conditions were used to complete the fabrication process aiming to achieve sharp-edge profiles on either side of the pillars. Controlling the edge profiles of those fabricated pillars enables to avoid shortcuts that induce magnetoresistance effect. Not only structural properties of each layer in the MgO junction are characterized, but its compositional characteristics are also explored with electron energy loss spectroscopy, this aims to elucidate the role of elements existing in the given MgO structure. Results of this work are of technological interest since they provide a better understanding in the microstructural properties of the MgO-based magnetic tunnel junctions.

In this paper, a systematic investigation of the microstructure, high performance magnetic hardness as well as novel magnetic memory effect of the Pr(4)Fe(76)Co(10)B(6)Nb(3)Cu(1) nanocomposite magnet fabricated by conventional melt-spinning followed by annealing at temperatures ranging from 600 to 700 degrees C in Ar gas for nanocrystallization are presented and discussed. Transmission electron microscopy (TEM) observation confirms an ultrafine structure of bcc-Fe(Co) as a magnetically soft phase and Pr(2)Fe(14)B as a hard magnetic phase with a spring-exchange coupling in order to form the nanocomposite state. Electron diffraction analysis also indicates that the Co atoms together with Fe atoms form the Fe(70)Co(30) phase with a very high magnetic moment (2.5 mu(B)), leading to a high saturation magnetization of the system. High magnetic hardness is obtained in the optimally heat-treated specimen with coercivity H(c) = 3.8 kOe, remanence B(r) = 12.0 kG, M(r)/M(s) = 0.81 and maximum energy product (BH)(max) = 17.8 MG Oe, which is about a 25% improvement in comparison with recent results for similar compositions. High remanence and reduced remanence are the key factors in obtaining the high performance with low rare-earth concentration (only 4 at.%). High-resolution TEM analysis shows that there is a small amount of residual amorphous phase in the grain boundary, which plays a role of interphase to improve the exchange coupling. Otherwise, in terms of magnetic after-effect measurement, a magnetic memory effect was observed for the first time in an exchange-coupled hard magnet.